Zinc oxide (ZnO) colloid has drawn significant attention recently due to its wide range of potential applications such as photonic crystals, solar cells, sensors, and other optical devices. In this work, low cost sol-gel spin coating technique was employed to synthesis ZnO colloid. The influences of stirring speed and post annealing temperature on the properties of ZnO colloid was investigated. The structural and optical properties of ZnO colloid was characterized using field-emission scanning electron microscopy (FESEM) and ultraviolet-visible (UV-Vis) spectrophotometer, respectively. Subsequently, Tauc method was used to estimate the optical band gap of the ZnO colloid based on the optical transmittance data. The effects of the stirring speed and post annealing temperature on the structural and optical properties of ZnO colloid are revealed and discussed in this paper. It was found that ZnO colloid prepared by the stirring speed of 500rpm and 400°C post annealing temperature demonstrates the best dispersity quality of colloid system.
In this paper, zinc oxide (ZnO) colloidal spheres structures were prepared by sol-gel method which is simple, effective and less costly. The scanning electron microscopy (SEM) images illustrated the ZnO colloidal spheres structures with diameter size ranging between 200–700 nm. The particle size distribution of colloidal spheres was determined by the added amount of supernatant in dehydration process. 3 mL and 6 mL of added supernatant were resulted particle size distribution dominant in the range of 250–400 nm and 150–250 nm, respectively. Transmission spectra demonstrated the photonic band gap (PBG) of colloidal spheres prepared with different amounts of colloidal suspension coating sample were near ultraviolet and violet region. The thermal annealing process was introduced to narrow the PBG width of colloidal spheres based on Bragg’s law. Current-voltage measurement of ZnO colloidal spheres based thin film with particles size in the range of 150–250 nm showed that the resistivity of the thin film is 4.5 x 106 Ωcm.
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