We present a simple, nonvolatile, write-once-read-many-times ͑WORM͒ memory device utilizing an organic-on-inorganic heterojunction ͑OI-HJ͒ diode with a conductive polymer fuse consisting of polyethylene dioxythiophene:polysterene sulfonic acid ͑PEDOT:PSS͒ forming one side of the rectifying junction. Current transients are used to change the fuse from a conducting to a nonconducting state to record a logical ''1'' or ''0'', while the nonlinearity of the OI-HJ allows for passive matrix memory addressing. The device switches at 2 and 4 V for 50 nm thick PEDOT:PSS films on p-type Si and n-type Si, respectively. This is significantly lower than the switching voltage used in PEDOT:PSS/p-in Si memory elements ͓J. Appl Phys. 94, 7811 ͑2003͔͒. The switching results in a permanent reduction of forward-bias current by approximately five orders of magnitude. These results suggest that the OI-HJ structure has potential for use in low-cost passive matrix WORM memories for archival storage applications.
Delayed hypoxic leukoencephalopathy is an underrecognized syndrome of delayed demyelination, which is important to consider when delayed onset of neuropsychiatric symptoms follows a hypoxic event. The authors describe clinical and diagnostic features of three such cases, review the pathophysiology of delayed hypoxic leukoencephalopathy, and discuss features which may help distinguish it from toxic leukoencephalopathy.
Merged qualitative and quantitative findings support past literature regarding youth in the general population but also expand upon our knowledge of issues specific to youth and young adults with mental health disorders and addictions. Findings suggest interventions warranting further attention in community treatment settings.
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