Statistical analysis of energy levels is carried out. The density of surface states of MIS structures based on silicon is investigated. A mathematical model is constructed for the temperature dependence of the spectrum of the density of surface states for a wide energy range. A formula is derived for the density of surface states as a function of temperature. The thermal contributions of the expanded bands to the band gap of the semiconductor are taken into account. The resulting formula allows one to determine the density of energy states in the forbidden band in an explicit form, without taking into account the influence of the broadening of the allowed bands. This improves the accuracy of determining the concentration of impurities and defects in silicon.
In solar energy, which is one of the main solutions to the problems of alternative energy, the use of low-power solar energy and experiments on sensitive photocells have been planned and improved to create a mobile device that increases efficiency and speed of work.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.