We report on photoluminescence (PL) properties of europium (Eu) and ytterbium (Yb) co-doped silicon oxide films with different Si excess. After annealing the films in N2, strong PL were observed from Eu and Yb3+ ions and their intensities are correlated. The PL intensity of Eu is mainly from 3+ for no and relatively low temperature anneals (<900 °C) while the Eu2+ emission is dominating for annealing at 1000 °C or above in the co-doped Si-rich oxide films. Transmission electron microscopy shows amorphous (Eu, Yb, Si, O)-containing precipitates in the Si-rich oxide during 1000-1200 °C annealing and these precipitates are considered to be responsible for the Eu2+-related luminescence.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.