Presented here is proof-of-principle that a thin single crystal semiconductor film—when twist-wafer bonded to a bulk single crystal substrate (of the same material)—will comply to the lattice constant of a different single crystal semiconductor thick film grown on its surface. In our experiment, a 100 Å film of GaAs was wafer bonded to a GaAs bulk substrate, with a large twist angle between their 〈110〉 directions. The resultant twist boundary ensures high flexibility in the thin film. Dislocation-free films of In0.35Ga0.65P(∼1% strain) were grown with thicknesses of 3000 Å, thirty times the Matthews–Blakeslee critical thickness, on twist-wafer-bonded films of GaAs.

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We report on a scaleable synthesis route for highly luminescent silicon nanocrystal assemblies and demonstrate that their emission properties are identical to those known for other systems containing silicon nanocrystals. Structural investigations confirmed that chemically porosified metallurgical grade silicon powder consists of silicon nanocrystal assemblies having nanometer sizes characterized by very high total internal surface area. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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