Abstract. This work is dedicated to the study of InGaN based LED on the thickness variation effect. The operating voltage, total emission rate, efficiency droop and spontaneous recombination rate was improved by increasing the thickness of InGaN layer of InGaN/AlGaN electron blocking layer (EBL). Based on optical and electrical results, the thicker InGaN layer could have lower operating voltage and higher total emission rate. LED with 5nm thick InGaN layer also could prevent electron leakage into p-region and improve hole injection efficiency. As a result it decreases 60% of efficiency droops and reduces the trap assisted recombination in InGaN/AlGaN active light emitting region. This indicates that InGaN layer may decrease the non-radiative recombination.
Abstract. Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15µm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.
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