The stability and performance of N,N′‐dioctyl perylene diimide (PDI‐C8) and N,N′‐ditridecyl perylene diimide (PDI‐C13) thin‐film transistors (TFTs) are increased using optimized growth rates and sulfur‐modified top‐contact electrodes. Changing the grain size and the depth of grain boundaries by controlling film growth rate is another way of increasing the air stability of perylene diimides without electron‐withdrawing groups.
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