The energy yield of a Photovoltaic (PV) power plant depends upon the dc power output of the PV module. The irradiance and temperature are the two most important parameters affecting the dc power output. This paper analyses the dc power output of a multicrystalline PV module in the realistic environmental condition with respect to solar irradiance, ambient temperature and cell temperature. The real time data is collected from a 5 MW grid connected solar PV plant located in Jaisalmer, a district in Western Rajasthan. The paper brings forward a crucial and valuable fact that the modules work more efficiently at high temperature and high solar irradiance. For a multicrystalline PV module with maximum dc power output (P max ) at STC condition equal to 118.687KW, analyzed over a period of one year it is found that maximum dc power output (P dc ) at 22 o C ambient temperature and 40 cell temperature is only 72 KW while maximum P dc at cell temperature around 50-55 o C and ambient temperature around 35-38 o C is 90-92KW. Slight negative temperature coefficient for P dc with respect to temperature is observed if ambient temperature and cell temperature is greater than 35 o C and 50 o C respectively. However power output increases in direct proportion to irradiance outweighing the change in temperature. Higher the irradiance, higher is the dc power output, higher is the efficiency and correspondingly higher is the energy yield of the PV module. The multicrystalline PV module works efficiently and gives high yield in the extremely high temperature of Western Rajasthan. Rajasthan which receives world second largest radiation has the capability to meet the energy demands of India and the world as well if solar energy is harnessed in appropriate way.
In this paper, we discuss the use of a semiconductor multiple quantum well (MQW) electron wave filter for multi-channel communication applications. This bandpass-type electron wave energy filter, made of GaAs and Ga 0.55 Al 0.45 As, is designed for different numbers of layers and cavities for a pass wavelength of 10 nm. We report on the calculated values of the design parameters, such as the passband wavelength, 3-dB bandwidth, quality factor and passband loss for the electron wave filter. The design parameters are also evaluated for a tunable MQW electron wave filter when varying the angle at which the electron wave is incident on the input layer of the filter.
A new convergence scheme is designed to achieve a fast speed, low power and highly reliable operation for existing flash EEPROM technology. By applying a substrate bias and lowering the drain voltage, the gate injection is found to move from Drain-Avalanche-HotCarrier (DAHC) injection to Substrate-Current-Induced Hot Electron (SCIHE) injection. Compared to the well-known DAHC convergence scheme-[ 11, the new SCIHE scheme shortens the convergence time over a hundred times, reduces the total drain and substrate currents significantly for block convergence, and makes the device degradation negligible. Bias conditions are optimized for flash cells with medium channel doping of about 3 x 1017 ~m -~, 0.85 pm gate length and 73 A gate tunnel oxide to realize convergence times under 250 ps using this new low power scheme.
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