In this paper, set of wafers with separated processes was prepared and overlay measurement result was compared in two methods; IBO and DBO. Based on the experimental result, theoretical approach of relationship between overlay mark deformation and overlay variation is presented. Moreover, overlay reading simulation was used in verification and prediction of overlay variation due to deformation of overlay mark caused by induced processes. Through this study, understanding of individual process effects on overlay measurement error is given. Additionally, guideline of selecting proper overlay measurement scheme for specific layer is presented.
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