The surface phonon mode of CdSe quantum dots in a glass matrix was investigated by Raman spectroscopy. The blueshift and broadening of the surface phonon frequency were observed as the quantum dot size was reduced. It was shown that the observed size-dependent blueshift and broadening are mainly caused by the lattice contraction and the boundary relaxation, respectively. ͓S0163-1829͑99͒00811-5͔

We synthesized free-standing Si nanosheets (NSs) with a thickness of about <2 nm using a chemical vapor deposition process and studied their optical properties. The Si NSs were formed by the formation of frameworks first along six different <110> directions normal to [111], its zone axis, and then by filling the spaces between the frameworks along the <112> directions under high flow rate of processing gas. The Si NSs showed blue emission at 435 nm, and absorbance and photoluminescence (PL) excitation measurements indicate that enhanced direct band transition attributes to the emission. Time-resolved PL measurement, which showed PL emission at 435 nm and a radiative lifetime of 1.346 ns, also indicates the enhanced direct band gap transition in these Si NSs. These outcomes indicate that dimensionality of Si nanostructures may affect the band gap transition and, in turn, the optical properties.

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We report on the compatibility of various nanowires with hippocampal neurons and the structural study of the neuron–nanowire interface. Si, Ge, SiGe, and GaN nanowires are compatible with hippocampal neurons due to their native oxide, but ZnO nanowires are toxic to neuron due to a release of Zn ion. The interfaces of fixed Si nanowire and hippocampal neuron, cross-sectional samples, were prepared by focused ion beam and observed by transmission electron microscopy. The results showed that the processes of neuron were adhered well on the nanowire without cleft.

The interfacial electronic structures of fullerene (C60)/zinc-phthalocyanine (ZnPc) and C60/ZnPc:C60 (50 wt %) containing a blended layer were investigated by in situ ultraviolet photoelectron spectroscopy (UPS), in an attempt to understand the role of the blended layer in improving the performance of organic photovoltaic devices that contain such layers. From the UPS spectra, the band bending found to be 0.30 eV in the ZnPc layer and 0.43 eV in the C60 layer at the C60/ZnPc interface. On the other hand, the band bending was 0.25 eV in both of the organic layers at the ZnPc:C60/ZnPc interface and no significant band bending in the C60 layer at the C60/ZnPc:C60 interface was found. The observed interface dipole was 0.06 eV at the C60/ZnPc interface and 0.26 eV at the ZnPc:C60/ZnPc interface. The offset between the highest unoccupied molecular orbital of ZnPc and the lowest occupied molecular orbital of C60 was 0.75 eV at C60/ZnPc and was 1.04 eV at the ZnPc:C60/ZnPc interface. The increased offset can be attributed to an increase in the interface dipole, caused by the blending donor and acceptor material. The blending facilitates charge transfer between the donor and acceptor, resulting in an increase in the interface dipole, resulting in a larger offset.