Two-side Surface Photovoltage (TS-SPV) based on measuring SPV from both wafer sides is proposed as novel approach for silicon surface contamination monitoring. TS-SPV is applied to investigate the process of diffusion of implanted iron in lightly doped p-type silicon during Rapid Thermal Anneal (RTA). Good correlation was found for iron distribution vs. RTA conditions in the temperature range from 375 to 1100oC. The portion of electrically active interstitial iron measured by TS-SPV was studied as function of RTA time and temperature conditions. Low thermal budget RTA combined with TS-SPV is proven to be effective to monitor iron contamination and to identify the contamination sources character and location.
Photoluminescence (PL) was proposed as non-destructive technique for highly doped silicon material characterization. PL intensity had been observed to decrease for intentionally metal contaminated areas. PL studies were applied to iron contaminated silicon wafers after the thermal treatment at 1150 and 1250oC to validate the PL technique for the quantitative evaluation of bulk iron in silicon. Iron contamination ranged from 109 cm-3 to 1012 cm-3. For lightly doped p-type and n-type silicon a good correlation was found between PCD lifetime, SPV diffusion length (DL) and iron readings and PL intensity readings. PCD, SPV and PL high- resolution mapping was applied to build the point-to-point correlation. PL was shown to be sensitive to iron contamination at concentrations exceeding 1010cm-3 as calibrated by SPV using lightly doped p-type silicon. PL may be used as high-resolution non-destructive technique to track down the metal contamination sources in wafers processing.
Two-side Surface Photovoltage (TS-SPV) based on measuring SPV from both wafer sides is proposed as novel approach for silicon surface contamination monitoring. TS-SPV is applied to investigate the process of diffusion of implanted iron in lightly doped p-type silicon during Rapid Thermal Anneal (RTA). Good correlation was found for iron distribution vs. RTA conditions in the temperature range from 375 to 1100oC. The portion of electrically active interstitial iron measured by TS-SPV was studied as function of RTA time and temperature conditions. Low thermal budget RTA combined with TS-SPV is proven to be effective to monitor iron contamination and to identify the contamination sources character and location.
The purpose of this study is to understand the meaning of architectural history of designated cultural properties of modern educational facilities through the analysis of its status.This study considerate acceptance and evolution of modern educational facilities during the about seventy years from 1895 to 1965. Also, this study analyzes items that is distribution of construction and designation year, regional groups, and status of main structure material, status of conservation and utilization of facilities, its characteristics of architectural style.In this study, the result of analysis show that most analysis items of investment buildings are tend to biased and concentration to one direction. Accordingly, designated cultural properties of modern educational facilities are weakly express architectural representation and symbolism in the period of modern educational acceptance.
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