The principles of growing Ti:Sapphire single crystals with a high homogeneity of titanium distribution by the method of horizontal directional crystallization (HDC) with gradient doping (GD) of the initial charge of the raw material have been developed. The present work has demonstrated the possibility of using the HDC (GD) to obtain large Ti:Sapphire crystals and wide-aperture elements with good optical and structural characteristics for high-power laser applications.
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