Possible physical mechanism of enhanced low dose rate sensitivity (ELDRS) and
reduced low dose rate sensitivity (RLDRS) in bipolar devices is described.
Modification of the low dose rate conversion model is presented. The
enhanced or reduced sensitivity can be connected with a specific position of
the effective Fermi level relatively acceptor and donor radiation-induced
interface traps. The qualitative and quantitative analysis of the low dose
rate effects is presented. The effect of the oxide trapped charge on the
value of the oxide electric field and the yield of the oxide charge were
taken into account. It leads to dependence of the accumulation of
radiation induced oxide charge and interface traps on the dose rate. In
enhancement version the ELDRS and RLDRS conversion model describes the low
dose rate effect in as ?true? dose rate effect.
In this work we justify the necessity of using shutter-type modulators to create laser radiation with the required parameters in fiber-optic systems.This is necessary to detect the fact of making changes in the optical system (unauthorized connection with the restoration of the function of communication channels). We have developed a shutter-type optical radiation modulator design. This modulator design has no fundamental limitations on the power of laser radiation, which is used to solve various problems. The investigation results of different work regime to the modulator are presented.
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