Full-length single-walled carbon nanotubes (SWNTs) were rendered soluble in common organic solvents by noncovalent (ionic) functionalization of the carboxylic acid groups present in the purified SWNTs. Atomic force microscopy (AFM) showed that the majority of the SWNTs ropes were exfoliated into small ropes (2-5 nm in diameter) and individual nanotubes with lengths of several micrometers during the dissolution process. The combination of multiwavelength laser excitation Raman scattering spectroscopy and solutionphase visible and near-infrared spectroscopies was used to characterize the library of SWNTs that is produced in current preparations. The average diameter of metallic nanotubes was found by Raman spectroscopy to be smaller than that of semiconducting nanotubes in the various types of full-length SWNT preparations. This observation sheds new light on the mechanism of SWNT formation.

The past decade has witnessed an explosion of techniques used to pattern polymers on the nano (1-100 nm) and submicrometre (100-1,000 nm) scale, driven by the extensive versatility of polymers for diverse applications, such as molecular electronics, data storage, optoelectronics, displays, sacrificial templates and all forms of sensors. Conceptually, most of the patterning techniques, including microcontact printing (soft lithography), photolithography, electron-beam lithography, block-copolymer templating and dip-pen lithography, are based on the spatially selective removal or formation/deposition of polymer. Here, we demonstrate an alternative and novel lithography technique--electrostatic nanolithography using atomic force microscopy--that generates features by mass transport of polymer within an initially uniform, planar film without chemical crosslinking, substantial polymer degradation or ablation. The combination of localized softening of attolitres (10(2)-10(5) nm3) of polymer by Joule heating, extremely non-uniform electric field gradients to polarize and manipulate the soften polymer, and single-step process methodology using conventional atomic force microscopy (AFM) equipment, establishes a new paradigm for polymer nanolithography, allowing rapid (of the order of milliseconds) creation of raised (or depressed) features without external heating of a polymer film or AFM tip-film contact.

Mechanistic aspects of the reductive dehalogenation of trichloroethylene using zerovalent iron are studied with three different surface characterization techniques. These include scanning electron microscopy, surface profilometry, and atomic force microscopy. It was found that the pretreatment of an iron surface by chloride ions causes enhancement in the initial degradation rates. This enhancement was attributed to the increased roughness of the iron surface due to crevice corrosion obtained by pretreatment. The results indicate that the “fractional active site concentration” for the reactive sorption of trichloroethylene is related to the number of defects/abnormalities present on the surface of the iron. This was elucidated with the help of atomic force microscopy. Two possible mechanisms include (1) a direct hydrogenation in the presence of defects acting as catalyst and (2) an enhancement due to the two electrochemical cells operating in proximity to each other. The result of this study has potential for further research to achieve an increase in the reaction rates by surface modifications in a practical scenario.

An exact analytical solution, based on the method of images, is obtained for the description of the electric field between an atomic force microscope (AFM) tip and a thin dielectric polymer film (30 nm thick) spin coated on a conductive substrate. Three different tip shapes are found to produce electrostatic pressure above the plasticity threshold in the polymers up to 50 MPa. It is shown experimentally that a strong nonuniform electric field ͑5 ϫ 10 8 -5ϫ 10 9 V m −1 ͒ between the AFM tip and polymer substrate produces nanodeformations of two different kinds in planar polymer films. Nanostructures (lines and dots) 10-100 nm wide and 0.1-5 nm high are patterned in the polymer films by using two different experimental techniques. The first technique relies on electric breakdown in the film leading to polymer heating above the glass transition point followed by mass transport of softened polymer material towards the AFM tip. The second technique is believed to be associated with plastic deformation of the polymer surface at the nanoscale. In this case the nanostructures are experimentally patterned in the films with no external biasing of the AFM tip, and using only the motion of the tip. This suggests an additional nanomechanical approach for nanolithography in polymer films of arbitrary thickness.

We report the observation of anomalously high currents of up to 500 µA during direct oxide nanolithography on the surface of n-type silicon {100}. Conventional nanolithography on silicon with an atomic force microscope (AFM) normally involves currents of the order of 10 −10-10 −7 A and is associated with ionic conduction within a water meniscus surrounding the tip. The anomalous current we observe is related to an electrical breakdown resulting in conduction dominated by electrons rather than ions. We discuss the electron source during the AFM-assisted nanolithography process, and the possibility of using this breakdown current for nanoscale parallel writing.

Amplitude modulated electrostatic lithography using atomic force microscopy (AFM) on 20–50 nm thin polymer films is discussed. Electric bias of AFM tip increases the distance over which the surface influences the oscillation amplitude of an AFM cantilever, providing a process window to control tip-film separation. Arrays of nanodots, as small as 10–50 nm wide by 1–10 nm high are created via a localized Joule heating of a small fraction of polymer above the glass transition temperature, followed by electrostatic attraction of the polarized viscoelastic polymer melt toward the AFM tip in the strong (108–109 V/m) nonuniform electric field.

Z -lift electrostatic lithography on thin (10–50nm) polystyrene (PS) films is discussed. The height of nanostructures can be controlled via mechanically drawing or depressing the cantilever height (z-lift) during the application of a voltage. Since polymer is not removed or crosslinked during structure formation, the features are erasable. Various aspects such as voltage doses, film thickness, z-lift height, and rate are explored. Structure height formation relies mainly on, and is proportional, to the z-lift magnitude; however, only a narrow range of voltages yields structures for any given film thickness. Structures ranging from 0–10nm are produced on a 40nm thick PS film using −36V by varying the z-lift on a 0.1–0.9N∕m cantilever from −20nm to +400nm.

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