Perovskite quantum dots (PQDs) have been considered promising and effective photovoltaic absorber due to their superior optoelectronic properties and inherent material merits combining perovskites and QDs. However, they exhibit low moisture stability at room humidity (20–30%) owing to many surface defect sites generated by inefficient ligand exchange process. These surface traps must be re-passivated to improve both charge transport ability and moisture stability. To address this issue, PQD-organic semiconductor hybrid solar cells with suitable electrical properties and functional groups might dramatically improve the charge extraction and defect passivation. Conventional organic semiconductors are typically low-dimensional (1D and 2D) and prone to excessive self-aggregation, which limits chemical interaction with PQDs. In this work, we designed a new 3D star-shaped semiconducting material (Star-TrCN) to enhance the compatibility with PQDs. The robust bonding with Star-TrCN and PQDs is demonstrated by theoretical modeling and experimental validation. The Star-TrCN-PQD hybrid films show improved cubic-phase stability of CsPbI3-PQDs via reduced surface trap states and suppressed moisture penetration. As a result, the resultant devices not only achieve remarkable device stability over 1000 h at 20–30% relative humidity, but also boost power conversion efficiency up to 16.0% via forming a cascade energy band structure.
The hole transport layer (HTL) plays a key role in inverted perovskite solar cells (PSCs), and nickel oxide has been widely adopted for HTL. However, a conventional solution‐processed bottom‐up approach for NiOx (S‐NiO) HTL fabrication shows several drawbacks, such as poor coverage, irregular film thickness, numerous defect sites, and inefficient hole extraction from the perovskite layer. To address these issues, herein, a novel NiOx HTL top‐down synthesis route via electrochemical anodization is developed. The basicity of the electrolyte used in anodization considerably influences electrochemical reactions and results in the structure of the anodized NiOx (A‐NiO). The optimized A‐NiO provides outstanding optoelectrical properties, including uniform film thickness, enhanced transmittance, deep‐lying valance band, low trap density, and better hole extraction ability from the perovskite. Owing to these advantages, the A‐NiO‐based inverted PSC exhibits an improved power conversion efficiency of 21.9% compared with 19.1% for the S‐NiO‐based device. In addition, the A‐NiO device shows a higher inlet and long‐term ambient stability than the S‐NiO device due to the superior hole transfer ability of A‐NiO, which suppresses charge accumulation between NiOx and the perovskite interface.
Photoelectrochemical (PEC) hydrogen production via water splitting is a promising sustainable energy conversion method. However, most semiconductors used as photoanodes in PEC splitting exhibit several drawbacks, including ultraviolet (UV)-limited activity, toxic components, and complicated material processing. To address these issues, this study presents a photoanode design strategy for visible-light-driven PEC water splitting in aqueous Na2SO4 solution using a solution-processable AgBiS2 nanocrystal (NC) photoanode. It was observed that the characteristics of the ligand used for the AgBiS2 NC photoanode are crucial in determining its PEC water splitting performance. Moreover, the thiol ligand-capped AgBiS2 NC photoanode shows a higher photocurrent density (J ph) in both 1 sun and visible light than typical TiO2 or Bi2S3 NC photoanodes owing to its excellent electron collection ability and low interfacial charge transfer resistance. The AgBiS2 NC photoanode emits 91% of J ph under visible and near-IR light, whereas the Bi2S3 NC photoanodes exhibited a J ph of 67% under the same conditions, demonstrating the superiority of AgBiS2 NC materials for application in highly efficient visible-light-driven PEC devices.
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