Advance in wet chemistry enables the sophisticated design of nanocrystal quantum dots (QDs) and allows unprecedented color purity and brightness, promising their useful applications in a variety of light-emitting applications. A representative example is core/shell heterostructures, in which charge carriers are effectively decoupled from structural artifacts to generate photons efficiently. Despite the development of widely accepted synthetic protocols for Cd- or Pb-based QDs, the progress in heterostructuring environmentally benign QDs has been lagging behind, and so is the practical use of these QDs. Herein, we present a design principle for InP/ZnSe x S1–x heterostructured QDs. A principal design approach is the growth of uniformly thick inorganic shell consisting of a ZnSe x S1–x inner shell and a ZnS outermost shell that effectively confines electrons from spreading inward of QDs. Comprehensive studies across synthesis, spectroscopic analysis, and calculation uncover that the presence of Se near the InP emissive core enables a uniform shell growth to an extended thickness and the S-rich exterior shell ensures the decoupling of the electron wave function from the surface trap states. Engineering composition profile across multiple shells enables us to realize InP/thick-shell QDs meeting the requirements of light-emitting applications such as high photoluminescence quantum yield, narrow spectral bandwidth, and enhanced photochemical robustness. We capitalize on bright, robust, and color-pure InP/ZnSe x S1–x /ZnS QDs with a range of emission wavelength covering from cyan to red regions by exemplifying their use in the primary-color light-emitting diodes (peak external quantum efficiency of 3.78 and 3.92% for green- and red-emitting ones, respectively).

Using a planar metamaterial, which consists of two silver strips, we theoretically demonstrate the plasmonic electromagnetically-induced transparency (EIT)-like spectral response at optical frequencies. The two silver strips serve as the bright modes, and are excited strongly by the incident wave. Based on the weak hybridization between the two bright modes, a highly-dispersive plasmonic EIT-like spectral response appears in our scheme. Moreover, the group index is higher than that of another scheme which utilizes the strong coupling between the bright and dark modes.

We investigated the instability of advective accretion flow as a consequence of angular momentum transfer in one-dimensional, quasi-spherical transonic accretion flow around a non-rotating black hole. The code is designed to include the effects of viscosity; the hydrodynamics component preserves angular momentum strictly with Lagrangian and remap method in absence of viscosity, while the viscosity component updates viscous angular momentum transfer through the implicit method. We performed two tests to demonstrate the suitability of the code for accretion study. First, we simulated the inviscid, low angular momentum, transonic accretion flow with shocks around a black hole, and then the subsonic, self-similar ADAF solution around a Newtonian object. Both simulations fitted the corresponding analytical curves extremely well. We then simulated a rotating, viscous, transonic fluid with shocks. We showed that for low viscosity parameter, stable shocks at larger distance are possible. For higher viscosity parameter, more efficient angular momentum transfer in the post-shock disk makes the shock structure oscillatory. Moreover, as the shock drifts to larger distances, a secondary inner shock develops. We showed that the inner shock is the direct consequence of expansion of the outer shock, as well as creation of regions with ∂l/∂r < 0 due to more efficient angular momentum transfer near the inner sonic point. We showed that all disk parameters, including emissivity, oscillate with the same period as that of the shock oscillation. Our simulation may have implication for low frequency QPOs, e.g., GRO J1655-40 and XTE J1550-564.

We simulate shock-free and shocked viscous accretion flow onto a black hole in a two dimensional cylindrical geometry, where initial conditions were chosen from analytical solutions. The simulation code used the Lagrangian Total Variation Diminishing (LTVD) and remap routine, which enabled us to attain high accuracy in capturing shocks and to handle the angular momentum distribution correctly. Inviscid shock-free accretion disk solution produced a thick disk structure, while the viscous shock-free solution attained a Bondi-like structure, but in either case, no jet activity nor any QPO-like activity developed. The steady state shocked solution in the inviscid, as well as, in the viscous regime, matched theoretical predictions well. However, increasing viscosity renders the accretion shock unstable. Large amplitude shock oscillation is accompanied by intermittent, transient inner multiple shocks. Such oscillation of the inner part of disk is interpreted as the source of QPO in hard X-rays observed in micro-quasars. Strong shock oscillation induces strong episodic jet emission. The jets also showed existence of shocks, which are produced as one shell hits the preceding one. The periodicity of jets and shock oscillation were similar. The jets for higher viscosity parameter are evidently stronger and faster.

The theoretical and experimental current–voltage characteristics of 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) are discussed. The manufactured 50-nm-gate-length n-type SB-MOSFET shows large on/off current ratio with low leakage current less than 10−4 μA/μm. The saturation current is 120 μA/μm when drain and gate voltage is 1 and 3 V, respectively. The experimental current–voltage characteristics of 50-nm-gate-length n-type SB-MOSFET are fitted using newly developed theoretical model. From the theoretical analysis, the off- and on-current is mainly attributed to the thermionic and tunneling current, respectively. The decrease of tunneling distance at silicon/silicide Schottky junction with the increase of drain voltage gives the increase of tunneling current. This phenomenon is explained by using drain-induced Schottky barrier thickness thinning effect.