Ischemic strokes result in the death of brain tissue and a wave of downstream effects, often leading to lifelong disabilities or death. However, the underlying mechanisms of ischemic damage and repair systems remain largely unknown. In order to better understand these mechanisms, TMT-isobaric mass tagging and mass spectrometry were conducted on brain cortex extracts from mice subjected to one hour of middle cerebral artery occlusion (MCAO) and after one hour of reperfusion. In total, 2,690 proteins were identified and quantified, out of which 65% of the top 5% of up-and down-regulated proteins were found to be significant (p < 0.05). Network-based gene ontology analysis was then utilized to cluster all identified proteins by protein functional groups and cellular roles. Although three different cellular functions were identified-organelle outer membrane proteins, cytosolic ribosome proteins, and spliceosome complex proteins-several functional domains were found to be common. Of these, organelle outer membrane proteins were downregulated whereas cytosolic ribosome and spliceosome complex proteins were upregulated, indicating that major molecular events post-stroke were translation-associated and subsequent signaling pathways (e.g., poly (ADP-ribose) (PAR) dependent cell death). By approaching stroke analyses via TMT-isobaric mass tagging, the work herein presents a grand scope of protein-based molecular mechanisms involved with ischemic stroke recovery.
Laser-induced forward transfer (LIFT) and selective laser sintering (SLS) are two distinct laser processes that can be applied to metal nanoparticle (NP) ink for the fabrication of a conductive layer on various substrates. A pulsed laser and a continuous-wave (CW) laser are utilized respectively in the conventional LIFT and SLS processes; however, in this study, CW laser-induced transfer of the metal NP is proposed to achieve simultaneous sintering and transfer of the metal NP to a wide range of polymer substrates. At the optimum laser parameters, it was shown that a high-quality uniform metal conductor was created on the acceptor substrate while the metal NP was sharply detached from the donor substrate, and we anticipate that such an asymmetric transfer phenomenon is related to the difference in the adhesion strengths. The resultant metal electrode exhibits a low resistivity that is comparable to its bulk counterpart, together with strong adhesion to the target polymer substrate. The versatility of the proposed process in terms of the target substrate and applicable metal NPs brightens its prospects as a facile manufacturing scheme for flexible electronics.
For the improved surface plasmon-coupled photoluminescence emission, a more accessible fabrication method of a controlled nanosilver pattern array was developed by effectively filling the predefined hole array with nanosilver colloid in a UV-curable resin via direct nanoimprinting. When applied to a glass substrate for light emittance with an oxide spacer layer on top of the nanosilver pattern, hybrid emission enhancements were produced from both the localized surface plasmon resonance-coupled emission enhancement and the guided light extraction from the photonic crystal array. When CdSe/ZnS nanocrystal quantum dots were deposited as an active emitter, a total photoluminescence intensity improvement of 84% was observed. This was attributed to contributions from both the silver nanoparticle filling and the nanoimprinted photonic crystal array.
An efficient three-dimensional (3D) nanostructure photoelectric device is presented. An Al-doped ZnO (AZO) coating was applied to lithography-free patterned Si nanopillars and spontaneously formed a radial heterojunction (n-AZO/p-Si) photodiode having a quality ideality factor of 1.64. A significantly enhanced photocurrent of 5.45 mA/cm2 was obtained from the 3D nanostructure relative to that of a planar substrate (1.1 mA/cm2). This enhancement is induced by enlargement of the light-active surface area and an anti-reflection effect. Due to the intermediate refractive index of AZO, the reflection was distinctively reduced in the air-Si system. It discusses an effective approach for realizing nanostructured photoelectric device.
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