Electron tomography and high-resolution transmission electron microscopy were used to characterize the unique three-dimensional structures of helical or zigzagged GaN, ZnGa2O4, and Zn2SnO4 nanowires. The GaN nanowires adopt a helical structure that consists of six equivalent <011> growth directions with the axial [0001] direction. We also confirmed that the ZnGa2O4 nanosprings have four equivalent <011> growth directions with the [001] axial direction. The zigzagged Zn2SnO4 nanowires consisted of linked rhombohedrons having the side edges matched to the <110> direction and the [111] axial direction.
Vertically aligned Mn (10%)-doped Fe 3 O 4 (Fe 2.7 Mn 0.3 O 4 ) nanowire arrays were produced by the reduction/ substitution of pregrown Fe 2 O 3 nanowires. These nanowires were ferromagnetic with a Verwey temperature of 129 K. X-ray magnetic circular dichroism measurements revealed that the Mn 2+ ions preferentially occupy the tetrahedral sites, substituting for the Fe 3+ ions. We observed that the Mn substitution decreases the magnetization, but increases the electrical conductivity. We developed highly sensitive gas sensors using these nanowire arrays, operating at room temperature, whose sensitivity showed a correlation with their bond strength of diatomic/triatomic molecules.
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