A precise and fast computational method for the simulation and analysis of moiré patterns is proposed. This new algorithm is based on convolution with superposition of the intensity profile which is transmitted from the optical layers and the point spread function. The computational time is shown to be much faster than that of the ray-tracing algorithm because the new algorithm does not involve a massive calculation. Also, information on the moiré pitch can be extracted directly from the sampling data of the moiré patterns.
Optimizing the design of the surface texture is an essential aspect of Si solar cell technology as it can maximize the light trapping efficiency of the cells. The proper simulation tools can provide efficient means of designing and analyzing the effects of the texture patterns on light confinement in an active medium. In this work, a newly devised algorithm termed Slab-Outline, based on a ray tracing technique, is reported. The details of the intersection searching logic adopted in Slab-Outline algorithm are also discussed. The efficiency of the logic was tested by comparing the computing time between the current algorithm and the Constructive Solid Geometry algorithm, and its superiority in computing speed was proved. The validity of the new algorithm was verified by comparing the simulated reflectance spectra with the measured spectra from a textured Si surface.
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