Copper dual damascene is becoming the standard process for sub-quarter micron microelectronic interconnects. Photo-induced anodic corrosion could occur on a copper p-n junction sctructure during PCMP cleaning process and the prevention of such corrosion is critical for reducing defects and improving overall yield of copper integration. The electron/hole pairs are photo-generated in the p-n junction inducing potential difference. p+ diffused region has a built-in potential of 0.2~0.5 volts against n+ diffused region. Therefore, copper oxidation and etching happen on the p-side and copper re-deposition and growth are shown on the n-side. Tafel curve measurements can be used to provide accelerated corrosion rate data at certain voltage biases that can be charateristic of copper anodic corrosion. From the PCMP cleaning chemistry perspective, increasing copper inhibitor concentration and/or decreasing copper chelator levels are found to protect copper from anodic corrosion at voltage bias. In addition, using additional additives in the PCMP process can further reduce copper anodic corrosion in a PCMP environment.
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