N-doped and (Al,N)-codoped ZnO films were synthesized by oxidative annealing of (Zn + Zn 3 N 2 ) films, which were fabricated by reactive magnetron sputtering. Both nand p-type conductions were obtained in these ZnO:N and ZnO:AlN films. Optimal oxidation treatments for achieving p-type ZnO are annealing at 400-600°C for 10-60 min, depending on the film thickness and morphology. The electric properties were found to be very sensitive to the annealing conditions and film structure. As-deposited (Zn + Zn 3 N 2 ) films with and without Al addition had carrier concentrations of 10 21 -10 22 cm −3 . After conversion to ZnO, the n-type films had a carrier concentrations up to 10 19 cm −3 , whereas the p-type ZnO:N films had hole concentrations of 10 14 -10 16 cm −3 . (Al,N)-codoping increased the hole concentration of p-type film to 10 18 cm −3 despite a decrease in Hall mobility. The photoluminescence properties of the p-type ZnO films were also investigated. The synthesis of p-type ZnO:AlN by oxidative annealing is believed to provide an alternative approach to realize p-type conduction in codoped ZnO film by using N 2 as the N source.
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