We prepared tungsten trioxide (WO3) photoelectrode films from organic-additive-free aqueous solutions by a low-speed dip-coating technique. The evaporation-driven deposition of the solutes occurred at the meniscus during low-speed dip coating, resulting in the formation of coating layer on the substrate. Homogeneous WO3 precursor films were obtained from (NH4)10W12O41·5H2O aqueous solutions and found to be crystallized to monoclinic WO3 films by the heat treatment at 400-700 °C. All the films showed a photoanodic response irrespective of the heat treatment temperature, where a good photoelectrochemical stability was observed for those heated over 500 °C. The highest photoanodic performance was observed for the WO3 film heated at 700 °C, where the IPCE (incident photon-to-current efficiency) was 36.2% and 4.6% at 300 and 400 nm, respectively.
WO3 and M-doped WO3 (M = Sn or In) electrochromic films were obtained from aqueous solutions via evaporation-driven deposition. The In–WO3 films showed a faster electrochromic response than WO3 and Sn–WO3 films, and a good cycle stability.
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