Multilayers of Bi2Sr2Ca1Cu2O
x
/Bi2Sr2Cu1O
x
were prepared by pulsed laser deposition (PLD) using the fourth harmonic 266 nm YAG. Compared to an excimer laser, YAG PLD required the higher oxygen atmosphere. The higher oxygen pressure together with the lower energy generated by YAG laser collapsed the region of plume emission. In order to produce the same energy density as an excimer, only Q-switch was modulated by 2 Hz while the flash lamp kept the original repetition rate of 10 Hz. With the rate of 2 Hz, we obtained the higher energy density per pulse, and more stable laser output of the fourth harmonics, 266 nm. To characterize the multilayers, reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) were employed, and indicative of epitaxial layers with limited in-plane order. The resistivities of multilayers were measured by the Van der Pauw method, and showed the temperatures of superconducting transition, T
c0 (R=0), around 65 K on the multilayers.
X-ray reciprocal space mapping (XRSM) was employed to investigate epitaxial Bi2Sr2Ca1Cu2Ox(Bi-2212) film. Ordinal cross section XRSM (ω-2θ) and plan view XRSM (ω-ψ) clearly indicated asymmetric intensity distribution of four satellite peaks caused by supercell structure of Bi-2212 film. Modulation vector estimated by XRSM was q=0.2b*+0.9c*. The XRSM image simulated by sawtooth wave vector showed good agreement with asymmetric satellite peaks observed on epitaxial film.
The electrochemical behavior dependent on the microchannel depth is discussed using a parallel opposed dual electrode in the microchip. The microchannel depth was controlled easily by the thickness of the photoresist. Cyclic voltammetry (CV) was carried out with conventional mode and the generation-collection mode. High collection efficiency (max: 98%) and high current amplification (max: 5.2) were achieved without miniaturizing the dual electrode by micromachining techniques, when the microchip with the microchannel depth of 30 mm was used in the generation-collection mode at low sweep rates. Quantitative analysis was applied to electrochemically reversible species with a quicker response time of around a few seconds for the same microchannel depth on chronoamperometry (CA). We observed good linearity on the calibration plot of dopamine (2 Â 10 À6 -ca. 1 Â 10 À3 mol dm À3 ).
We succeeded for the first time in preparing a high-quality (101)-oriented epitaxial β-FeSi2 film on Si(111) wafer by metal-organic chemical vapor deposition (MOCVD) using Fe(CO)5 and SiH4 as source materials. The full width at half maximum (FWHM) of the rocking curve of the β-FeSi2 (202) peak was 0.46 degree for the film deposited at 750°C at a rate of 4 nm/min. Moreover, a smooth-surface film of up to 650 nm thickness could be deposited by this method. Carbon content in the film was less than 0.1 at%.
Yttria-stabilized zirconia (YSZ) was grown on Si(100) substrate by pulsed laser deposition (PLD). The laser used in this study was a 266 nm YAG laser with a second function generator modulating only the Q-switch while the primary generator modulated the flash lamp (slower Q-switch). Epitaxial growth was verified on YSZ film deposited without oxygen gas followed by primary deposition in oxygen atmosphere on Si substrate with a ∼0.4-nm-thin oxide layer. The crystallinity was strongly dependent on the thickness of the buffer layer deposited prior to the primary deposition of YSZ. The epitaxial growth was confirmed by φ scan, and ω scan (rocking curve) showed the full width at half maximum (FWHM) of 1.1 deg. The required oxygen pressure for epitaxial growth was quite high compared to that of excimer deposition.
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