Single-layer light emitting diodes (LEDs) were fabricated using poly[bis(p-butylphenyl)silane] as the emissive layer. An efficient and stable electroluminescence with a maximum at 407 nm was observed at room temperature under a forward electric field greater than 6×105 V/cm. The coincidence of electroluminescence with photoluminescence suggests the origin of the electroluminescence in an excited silicon chain segment. The high external quantum efficiency (0.1% photons/electron), narrow emission (full width at half maximum=15 nm), improved operating stability, and good solubility in organic solvents provide the possibility of using polysilanes for ultraviolet LEDs.
We propose a new beam scanning model that is applicable to electrooptic materials with electron traps. With this model, we can achieve both high-speed operation and wide-angle scanning, because the operating speed is limited not by the electron mobility but by the frequency limit of the electrooptic effect of the materials. The voltage dependence of the scanning angle at 100 kHz using a KTa1-xNbxO3 crystal is consistent with the property predicted by the proposed model.
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