Titanium oxide (TiO 2 ) thin films were formed on a Si substrate by metalorganic decomposition at temperatures ranging from 600 • C to 1000 • C. As-deposited films were in the amorphous state and were completely transformed after annealing at 600 • C to a crystalline structure with anatase as its main component. During crystallization in oxygen atomosphere, a reaction between TiO 2 and Si occurred at the interface, which resulted in the formation of a thin interfacial SiO 2 layer. Capacitance-voltage measurement showed good dielectric properties with a maximum dielectric constant of 76 for films annealed at 700 • C. For the crystallized TiO 2 films, the interface trap density was 1 × 10 11 cm −2 eV −1 , and the leakage current was 1 × 10 −8 A/cm 2 at 0.2 MV/cm. The modified structure of TiO 2 /SiO 2 /Si is expected to be suitable for the dielectric layer in an integrated circuit in place of SiO 2 or Si 3 N 4 films.
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