High precision measurements of oxygen nonstoichiometry d in thin film metal oxides M a O b6d at elevated temperatures and controlled oxygen partial pressures p O2 are reported with the aid of resonant microbalances. The resonant microbalances applied here consisted of y-cut langasite (La 3 Ga 5 SiO 14 ) and CTGS (Ca 3 TaGa 3 Si 2 O 14 ) piezoelectric resonators, operated in the thickness shear mode at $5 MHz. Measurements of variations in d of Pr 0.1 Ce 0.9 O 2-d (PCO) films are reported for the oxygen partial pressure range from 10 À8 bar to 0.2 bar at 700 C, and these results were found to be in good agreement with previously reported oxygen nonstoichiometry d data derived from chemical capacitance studies. The PCO thin-films were deposited via pulsed laser deposition on both sides of the resonators, whose series resonance frequency was tracked, converted into mass changes and, finally, into nonstoichiometry. The nonstoichiometry was observed to reach a plateau as the oxygen partial pressure dropped below about 10 À5 bar, the behavior being attributed to the full reduction of Pr to the trivalent state. These resonators enable stable operation up to temperatures above 1000 C, thereby maintaining high mass resolution suitable for determining oxygen nonstoichiometry variations in thin films deposited on such resonators. For the given experimental conditions, a mass resolution of $50 ng was achieved at 700 C with the CTGS resonator.
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