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Laser experiments with Pr(3+):LiYF4 under excitation with a frequency doubled optically pumped semiconductor laser emitting 5 W at 479 nm were performed at seven different laser wavelengths of 523, 546, 604, 607, 640, 698, and 720 nm. At all these wavelengths the output power exceeded 1 W. The best performance at 523 nm with an output power of 2.9 W at a slope efficiency of 72% and an optical-to-optical efficiency of 67% with respect to the incident pump power represents the highest efficiency ever reported for a praseodymium-doped laser material.

This paper summarizes our recent results on crystalline waveguides and waveguide lasers fabricated by the femtosecond-laser writing technique. Highly efficient waveguide lasers emitting in the near infrared spectral range based on ytterbium and neodymium doped Y 3 Al 5 O 12 with slope efficiencies above 70% and continuous wave output powers of more than 5 W were demonstrated. Furthermore, pulsed laser operation of passively Q-switched Yb:YAG and Nd:YAG wavequide lasers was achieved by incorporating the saturable absorber Cr 4+ :YAG in a monolithic setup. Based on fs-laser written curved structures in Yb:YAG, efficient curved waveguide lasers could be demonstrated. Also, waveguide lasers in the visible spectral range were investigated. We achieved laser emission in the green, orange, red and deep-red spectral region and could demonstrate output powers of more than 1 W with waveguides based on praseodymium doped materials. Additionally, switchable and dual wavelength operation between the orange and red laser emission was achieved. By utilizing the nonlinear crystal KTiOPO 4 as substrate material for fs-laser inscription, nonlinear waveguides were realized. With these devices, efficient second harmonic generation into the blue and green spectral range was achieved.

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The fundamental nature of charge transport in highly ordered organic semiconductors is under constant debate. At cryogenic temperatures, effects within the semiconductor such as traps or the interaction of charge carriers with the insulating substrate (dipolar disorder or Fröhlich polarons) are known to limit carrier motion. In comparison, at elevated temperatures, where charge carrier mobility often also decreases as function of temperature, phonon scattering or dynamic disorder are frequently discussed mechanisms, but the exact microscopic cause that limits carrier motion is debated. Here, the mobility in the temperature range between 200 and 420 K as function of carrier density is explored in highly ordered perylene‐diimide from 3 to 9 nm thin films. It is observed that above room temperature increasing the gate electric field or decreasing the semiconducting film thickness leads to a suppression of the charge carrier mobility. Via X‐ray diffraction measurements at various temperatures and electric fields, changes of the thin film structure are excluded as cause for the observed mobility decrease. The experimental findings point toward scattering sites or traps at the semiconductor–dielectric interface, or in the dielectric as limiting factor for carrier mobility, whose role is usually neglected at elevated temperatures.

Straight and s-curve Yb(7%):YAG waveguides have been fabricated with the femtosecond laser writing technique. By employing a novel writing scheme an increase of the refractive index change could be achieved in comparison to waveguides written with the standard procedure. Straight waveguides, fabricated with this scheme, enabled highly efficient Ti:sapphire laser pumped waveguide lasers with slope efficiencies of 79% and output powers of more than 1 W. With slope efficiencies from 50% to 60% for the curved waveguide lasers with radii of curvature of R ≥ 20 mm the possibility of fs-laser written complex optical devices is demonstrated.

Waveguides were fabricated in a 5 mm long Pr(0.5 at%):LiYF4 (YLF) crystal with a femtosecond Ti:sapphire laser system. Waveguiding was achieved inside a core surrounded by eight single modified tracks building a rhombic structure. The waveguide was pumped at a wavelength of 444 nm with an InGaN laser diode. Orange and deep red laser oscillation were realized. Maximum output powers of 25 mW at 604 nm and 12 mW at 720 nm with respect to the incident pump power were achieved.

Femto-second laser writing was used to fabricate waveguides in a z-cut KTP sample with losses below 0.8 dB/cm. They were used for efficient, broad bandwidth, Type II birefringent second harmonic generation to the green. The temperature and wavelength bandwidth were, 28 C ∙ cm and 0.85 nm ∙ cm, respectively.