D & TOF-SIMS instruments are used in conjunction with other analytical techniques in order to identify the sources of metallic contamination and particle-type defects. In this paper D & ToF-SIMS are used to identify metals in the P-type buried layer of BiCMOS transistors and eliminate them in order to improve the overall device performance and process yield.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.