BSIM6 is the new Compact Model Coalition (CMC) standard bulk MOSFET model. It offers excellent fitting capability, accurate RF/analog simulations, and similar implementation features of the small dimension effects as included in the popular BSIM4 model. These features make BSIM6 a very desirable candidate for future nano-MOSFET simulations. In this work we evaluate the capabilities of the model and perform benchmark tests to assess the strengths of the model. Bulk 90nm technology MOSFET data is used to extract BSIM6 for analog/RF specific applications. Industry standard benchmark tests have been performed and results shown against the hardware data (where applicable). The model is found to correlate very well with hardware data and passes all important model quality benchmark tests for analog/RF applications.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.