The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.
Intensive research is currently underway to exploit the highly interesting properties of nano-bits ("nano-sized particles and molecules") for optical, electronic and other applications. The basis of these unique properties is the small-size of these structures which result in quantum mechanical phenomena and interesting surface properties. The small molecules and/or nanoparticles are selected in such a way so that it can create an internal electric in the nanocomposite. We define a nanocomposite is an admixture of small molecules and/or nano-particles and a polymer. We have demonstrated the internal electric field in our devices, made from nanobits (nano-particles and/or molecules) and insulating materials, can contribute to the electrical bistability i.e. two conductive states.
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