A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

Saranti, Konstantina; Alotaibi, Sattam; Paul, Shashi

doi:10.1038/srep27506

Cited by 13 publications

(21 citation statements)

References 14 publications

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“…On the basis of this observation, we believe that there are more charges injected possible due to tunneling mechanism when applied voltage is increased. Hence, the enclosed area can be used as a vital parameter which refers to the amount of stored charge [31][32]. Fig.-14 suggests a consistent dependence of increased area with respect to the sweep voltage.…”

Section: Methodsmentioning

confidence: 99%

Creating Electrical Bistability Using Nano-bits — Application in 2-Terminal Memory Devices

et al. 2017

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Intensive research is currently underway to exploit the highly interesting properties of nano-bits ("nano-sized particles and molecules") for optical, electronic and other applications. The basis of these unique properties is the small-size of these structures which result in quantum mechanical phenomena and interesting surface properties. The small molecules and/or nanoparticles are selected in such a way so that it can create an internal electric in the nanocomposite. We define a nanocomposite is an admixture of small molecules and/or nano-particles and a polymer. We have demonstrated the internal electric field in our devices, made from nanobits (nano-particles and/or molecules) and insulating materials, can contribute to the electrical bistability i.e. two conductive states.

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Section: Methodsmentioning

confidence: 99%

Creating Electrical Bistability Using Nano-bits — Application in 2-Terminal Memory Devices

et al. 2017

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“…Research on VLS grown Si NWs began to experience a rapidly growing interest around twenty years ago, being those early activities focused on understanding the growth mechanisms and on improving control of the NW properties 17,18 . The field has progressively evolved so that most of the activity reported during the last decade has turned towards specialized applications in multiples areas, from energy 19–23 and healthcare 24–27 to information and communications technologies 28–30 . In consequence, the interest on NW based nanostructures with increasing compositional and structural complexity is also growing.…”

Section: Introductionmentioning

confidence: 99%

Imaging low-dimensional nanostructures by very low voltage scanning electron microscopy: ultra-shallow topography and depth-tunable material contrast

Zarraoa

González

Paulo

2019

Sci Rep

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We demonstrate the implications of very low voltage operation (<1 kV) of a scanning electron microscope for imaging low-dimensional nanostructures where standard voltages (2–5 kV) involve a beam penetration depth comparable to the cross-section of the nanostructures. In this common situation, image sharpness, contrast quality and resolution are severely limited by emission of secondary electrons far from the primary beam incidence point. Oppositely, very low voltage operation allows reducing the beam-specimen interaction to an extremely narrow and shallow region around the incidence point, enabling high-resolution and ultra-shallow topographic contrast imaging by high-angle backscattered electrons detection on the one hand, and depth-tunable material contrast imaging by low-angle backscattered electrons detection on the other. We describe the performance of these imaging approaches on silicon nanowires obtained by the vapor-liquid-solid mechanism. Our experimental results, supported by Monte Carlo simulations of backscattered electrons emission from the nanowires, reveal the self-assembly of gold-silica core-shell nanostructures at the nanowire tips without any ad-hoc thermal oxidation step. This result demonstrates the capacity of very low voltage operation to provide optimum sharpness, contrast and resolution in low-dimensional nanostructures and to gather information about nanoscaled core-shell conformations otherwise impossible to obtain by standard scanning electron microscopy alone.

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“…[ 97 ] demonstrated how the accumulation of charges could be achieved by the trapping of electrons to fabricate memory devices. This behavior was replicated by Saranti et al., but using silicon nanowires in 2016 [ 99 ] and subsequently further work. [ 100 ] The internal field was developed in this case, not by using nanoparticles as traps, but the large surface defects densities on the nanowire surfaces.…”

Section: History: Materials and Mechanismsmentioning

confidence: 57%

To Be or Not to Be – Review of Electrical Bistability Mechanisms in Polymer Memory Devices

Paul

2022

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Organic memory devices are a rapidly evolving field with much improvement in device performance, fabrication, and application. But the reports have been disparate in terms of the material behavior and the switching mechanisms in the devices. And, despite the advantages, the lack of agreement in regards to the switching behavior of the memory devices is the biggest challenge that the field must overcome to mature as a commercial competitor. This lack of consensus has been the motivation of this work wherein various works are compiled together to understand influencing factors in the memory devices. Different works are compared together to discover some clues about the nature of the switching occurring in the devices, along with some missing links that would require further investigation. The charge storage mechanism is critically analyzed alongside the various resistive switching mechanisms such as filamentary conduction, redox‐based switching, metal oxide switching, and other proposed mechanisms. The factors that affect the switching process are also analyzed including the effect of nanoparticles, the effect of the choice of polymer, or even the effect of electrodes on the switching behavior and the performance parameters of the memory device.

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A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

Cited by 13 publications

References 14 publications

Creating Electrical Bistability Using Nano-bits — Application in 2-Terminal Memory Devices

Creating Electrical Bistability Using Nano-bits — Application in 2-Terminal Memory Devices

Imaging low-dimensional nanostructures by very low voltage scanning electron microscopy: ultra-shallow topography and depth-tunable material contrast

To Be or Not to Be – Review of Electrical Bistability Mechanisms in Polymer Memory Devices

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