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Polyvinylidene fluoride (PVDF) was crystallized as thin films on (001) cleavage planes of ionic crystals as well as one-axially oriented polymer surfaces by using vacuum-evaporation or solution-growth technique. The polymer surfaces regulated the molecular orientation of PVDF. The ionic crystals controled the molecular conformation and produced the highly ordered a-form (on NaCl and KCI) and ƒÀ-form (on KBr) crystals of the polymer. Matching of the lattice spacings between the PVDF crystal and the substrates does not seem to be important in determining the crystalline form.

The chemical state and the electrical properties of the interfaces of thin oxide films grown on strained Si 1−x Ge x layers using plasma and thermal oxidation have been studied in detail. X-ray photoelectron spectroscopy studies show no Ge pile-up at the oxide/substrate interface. In the case of plasma oxidation, Ge at the oxide surface is found to be in a fully oxidized state, while the formation of an intermediate oxidized state is observed in the case of low-temperature thermal oxidation. High-frequency (1 MHz) capacitance-voltage (C-V ) and conductance-voltage (G-V ) measurements have indicated the growth of good quality gate oxides. The fixed oxide charge and interface state densities are comparable to those of low-temperature-grown metal-oxide-semiconductor capacitors on Si with aluminium gates.

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