Transparent conducting ZnO films are deposited by plasma assisted deposition technique on glass and plastic substrates at temperatures 60 ~ 300 °C using metallic Zn, metallic Ga and plasma-excited oxygen as source materials. Deposited films were characterized by X-ray diffraction (XRD), optical transmittance in the visible and infrared region, Raman scattering, and Hall measurements. Film properties are controlled by substrate temperature, oxygen source/zinc source supply ratio, and Ga doping. 350 nm-thick Ga-doped ZnO films deposited at 290 °C showed low resistivity (~2 × 10 -4 Ω cm) and high transmittance in the visible region (~85%).

Structural evaluation of the ZnO epitaxial layers grown by plasma‐assisted molecular beam epitaxy (PAMBE) on the GaAs (111)B, c ‐plane (0001) and a ‐plane (11‐20) sapphire (α ‐Al2O3) substrates was demonstrated by using high‐resolution X‐ray diffraction (XRD). The in‐plane epitaxial relationships between the ZnO layers and the substrates were found to be ZnO(0001)<11‐20>II GaAs(111)<1‐10>, ZnO(0001)<11‐20>IIα ‐Al2O3(0001) <1‐100> and ZnO (0001)<11‐20>II α ‐Al2O3(11‐20)<0001>. All the ZnO layers were highly oriented to the c‐axis but larger fluctuations of the c‐axis were observed for the layers on the GaAs(111)B substrates. The lattice parameters of the ZnO layers were evaluated from the θ ‐2θ and ω ‐2θ scans, and reciprocal lattice mappings (RLMs). The in‐plane compressive strains up to 0.3% in the ZnO layers on both the c ‐plane and a ‐plane sapphire substrates, and the in‐plane tensile strains up to 0.4% in the ZnO films on the GaAs(111)B substrates were observed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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