No abstract

All inorganic perovskites quantum dots (PeQDs) have attracted much attention for used in thin film display applications and solid-state lighting applications, owing to their narrow band emission with high photoluminescence quantum yields (PLQYs), color tunability, and solution processability. Here, we fabricated low-driving-voltage and high-efficiency CsPbBr PeQDs light-emitting devices (PeQD-LEDs) using a PeQDs washing process with an ester solvent containing butyl acetate (AcOBu) to remove excess ligands from the PeQDs. The CsPbBr PeQDs film washed with AcOBu exhibited a PLQY of 42%, and a narrow PL emission with a full width at half-maximum of 19 nm. We also demonstrated energy level alignment of the PeQD-LED in order to achieve effective hole injection into PeQDs from the adjacent hole injection layer. The PeQD-LED with AcOBu-washed PeQDs exhibited a maximum power efficiency of 31.7 lm W and EQE of 8.73%. Control of the interfacial PeQDs through ligand removal and energy level alignment in the device structure are promising methods for obtaining high PLQYs in film state and high device efficiency.

Highly efficient organic light-emitting diodes are in urgent demand in applications of new generation full-color displays and solid-state lighting sources. The limitation of device performance is greatly affected by extrinsic and intrinsic elements of the light out-coupling process. By elaborately designing emitters as sticklike molecules, horizontal orientation ratios in the range of 86–93% were realized to intrinsically increase the out-coupling factor of electroluminescence devices. These elongated compounds are inclined to lie parallel to substrate in vacuum-deposited thin solid films and regularize their transition dipole moments in a major degree. As consequences of such desirable molecule arrangement, remarkable external quantum efficiencies near 21% for pure blue devices, close to 30% for sky-blue devices, and over 35% for greenish blue devices were respectively achieved. A compatible strategy on devising high-performance emitters for organic electroluminescence is advocated herein.

Cesium lead halide (CsPbX, X = Cl, Br, or I) perovskite quantum dots (QDs) are known as ionic nanocrystals, and their optical properties are greatly affected by the washing solvent used during the purification process. Here, we demonstrate the purification process of CsPbBr perovskite QDs using low-dielectric-constant solvents to completely remove impurities, such as the reaction solvent and desorbed ligands. The use of the ether solvent diethylene glycol dimethyl ether (diglyme), having a low dielectric constant of ε = 7.23, as a poor solvent for reprecipitation allowed for multiple wash cycles, which led to high purity and high photoluminescence quantum yield for CsPbBr QDs. The light-emitting device constructed with the CsPbBr QDs and washed twice with diglyme (two-wash) showed a low turn-on voltage of 2.7 V and a peak external quantum efficiency of over 8%. Thus, the purification of perovskite QDs with multiple wash cycles using a low-dielectric-constant solvent is an effective approach for enhancing not only the optical properties but also the efficiency of perovskite quantum dot light-emitting devices.

Use of the intrinsic optoelectronic functions of organic semiconductor films has not yet reached its full potential, mainly because of the primitive methodology used to control the molecular aggregation state in amorphous films during vapor deposition. Here, a universal molecular engineering methodology is presented to control molecular orientation; this methodology strategically uses noncovalent, intermolecular weak hydrogen bonds in a series of oligopyridine derivatives. A key is to use two bipyridin‐3‐ylphenyl moieties, which form self‐complementary intermolecular weak hydrogen bonds, and which do not induce unfavorable crystallization. Another key is to incorporate a planar anisotropic molecular shape by reducing the steric hindrance of the core structure for inducing π–π interactions. These synergetic effects enhance horizontal orientation in amorphous organic semiconductor films and significantly increasing electron mobility. Through this evaluation process, an oligopyridine derivative is selected as an electron‐transporter, and successfully develops highly efficient and stable deep‐red organic light‐emitting devices as a proof‐of‐concept.

In organic light emitting devices (OLEDs), interfacial structures between multilayers have large impacts on the characteristics of OLEDs. Herein, we succeeded in revealing the interdiffusion in solution processed and thermal annealed OLEDs by neutron reflectometry. We investigated interfaces between a polymer under layer and small molecules upper layer. The small molecules diffused into the swollen polymer layer during the interfacial formation by the solution process, but the polymer did not diffuse into the small molecules layer. At temperatures close to the glass transition temperatures of the materials, asymmetric molecular diffusion was observed. We elucidated the effects of the interdiffusion on the characteristics of OLEDs. Partially mixing the interface improved the current efficiencies due to suppressed triplet-polaron quenching at the interface. Controlling and understanding the interfacial structures of the miultilayers will be more important to improve the OLED characteristics.

Record-breaking highly efficient, deep-red phosphorescent OLEDs are developed. The optimized device exhibits an external quantum efficiency of nearly 18% and an electroluminescence emission wavelength of 670 nm.

A lot of research, mostly using electron-injection layers (EILs) composed of alkali-metal compounds has been reported with a view to increase the efficiency of solution-processed organic light-emitting devices (OLEDs). However, these materials have intractable properties, such as a strong affinity for moisture, which cause the degradation of OLEDs. Consequently, optimal EIL materials should exhibit high electron-injection efficiency as well as be stable in air. In this study, polymer light-emitting devices (PLEDs) based on the commonly used yellow-fluorescence-emitting polymer F8BT, which utilize poly(diallyldimethylammonium)-based polymeric ionic liquids, are experimentally and analytically investigated. As a result, the optimized PLED employing an EIL comprising poly(diallyldimethylammonium) bis(trifluoromethanesulfonyl)imide (poly(DDA)TFSI), which is expected to display good moisture resistance because of water repellency of fluorocarbon groups, exhibits excellent storage stability in air and electroluminescence performance with a low turn-on voltage of 2.01 V, maximum external quantum efficiency of 9.00%, current efficiency of 30.1 cd A , and power efficiency of 32.4 lm W . The devices with poly(DDA)TFSI show one of the highest efficiencies as compared to the reported standard PLEDs. Moreover, poly(DDA)TFSI is applied as a hole-injection layer (HIL). The optimized PLED using poly(DDA)TFSI as the HIL exhibits performances comparable to those of a device that uses a conventional poly(3,4-ethylenedioxy-thiophene):poly(4-styrenesulfonate) HIL.