The magnetic behavior of 100 nm period arrays of Ni nanowires embedded in a highly ordered alumina pore matrix were characterized by magnetometry and magnetic force microscopy. Reducing the diameter of the nanowires from 55 to 30 nm while keeping the interwire distance constant leads to increasing coercive fields from 600 to 1200 Oe and to increasing remanence from 30% to 100%. The domain structure of the arrays exhibits in the demagnetized state a labyrith-like pattern. These results show that stray field interactions of single domain nanowires are entirely dependent on the nanowire diameter.

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II. EXPERIMENTAL DETAILS A. Synthesis of Ag NWsSynthesis of Ag NWs has been carried out by various procedures, such as template based 14,15 and soft solution methods. 16,17 Here, the Ag NWs were synthesized by reducing silver nitrate (AgNO 3 ) with ethylene glycol (EG) in presence of copper dichloride dihydrate (CuCl 2 + 2 H 2 O) and polyvinylpyrrolidone (PVP). The EG is used as solvent and reducing agent whereas the PVP is used as capping agent. 18 In the beginning, 10 mL of EG (Sigma-Aldrich, anhydrous 99.8 %) was heated in an oil bath at 151.5 ○ C for 1 h under continuous magnetic stirring at 260 rpm. Then, 80 µL of a 4 mM CuCl 2 + 2 H 2 O (Sigma-Aldrich, 99.999 %)/EG solution was added to the preheated EG and stirred for another 15 min. Next, 3 mL of 0.282 mM PVP (Sigma-arXiv:1410

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The compounds, ([SnSe]1.15)1(VSe2)n with n = 1, 2, 3, and 4, were prepared using designed precursors in order to investigate the influence of the thickness of the VSe2 constituent on the charge density wave transition. The structure of each of the compounds was determined using X-ray diffraction and scanning transmission electron microscopy. The charge density wave transition observed in the resistivity of ([SnSe]1.15)1(VSe2)1 was confirmed. The electrical properties of the n = 2 and 3 compounds are distinctly different. The magnitude of the resistivity change at the transition temperature is dramatically lowered and the temperature of the resistivity minimum systematically increases from 118 K (n = 1) to 172 K (n = 3). For n = 1, this temperature correlates with the onset of the charge density wave transition. The Hall-coefficient changes sign when n is greater than 1, and the temperature dependence of the Hall coefficient of the n = 2 and 3 compounds is very similar to the bulk, slowly decreasing as the temperature is decreased, while for the n = 1 compound the Hall coefficient increases dramatically starting at the onset of the charge density wave. The transport properties suggest an abrupt change in electronic properties on increasing the thickness of the VSe2 layer beyond a single layer.