The intergrowth compound (SnSe)1.15VSe2 is prepared from the elements by physical vapor deposition using the modulated elemental reactant technique. The product is characterized by XRD, TEM, and electrical measurements. The structure contains alternating SnSe bilayers and VSe2 trilayers with extensive rotational disorder between the individual SnSe and VSe 2 constituents. The compound undergoes a charge or spin density wave transition, which has not been observed in previous misfit layer compounds. (SnSe)1.15VSe2 is a metal, but shows an abrupt increase in the resistivity between 30 and 100 K. -(ATKINS, R.; DISCH, S.; JONES, Z.; HAEUSLER, I.; GROSSE, C.; FISCHER, S. F.; NEUMANN, W.; ZSCHACK, P.; JOHNSON*, D. C.; J. Solid State Chem. 202 (2013) 128-133, http://dx.