Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synthesized in planar form; however, non-planar geometries are also possible and enable a number of key applications. This paper reviews the material properties and characteristics of single crystal and polycrystalline CVD diamond, and how these can be utilized, focusing particularly on optics, electronics and electrochemistry. It also summarizes how CVD diamond can be tailored for specific applications, on the basis of the ability to synthesize a consistent and engineered high performance product.

A combination of high-resolution electrical and electrochemical imaging techniques, in conjunction with cathodoluminescence (CL), is used to investigate the electrochemical behavior of oxygen-terminated highly doped polycrystalline boron doped diamond (BDD). The BDD has a dopant density approximately 5 x 10(20) atoms cm(-3), grain size ca. 5-40 microm, and thickness 500 microm. CL imaging demonstrates that boron uptake is nonuniform across the surface of BDD, and conducting atomic force microscopy (C-AFM) highlights how this impacts on the local conductivity. While C-AFM shows no evidence for enhanced grain boundary conductivity, two characteristic conductivity domains are found with resistances of ca. 100 kOmega and ca. 50 MOmega. With the use of scanning electrochemical microscopy (SECM), local heterogeneities are also observed in the electroactivity of the BDD surface, consistent with the two different types of conducting regions. Local currents of the magnitude expected for metal-like behavior are observed in some regions, suggesting degenerative doping of the grains (supported by CL studies). In other regions, slower electron transfer is apparent. However, even for the reduction of Ru(NH(3))(6)(3+), which occurs at potentials far negative of the flat-band potential for oxygen-terminated BDD, all areas of the surface show some electroactivity. This study highlights that the spatially heterogeneous conductivity and corresponding electroactivity of BDD are readily resolved using a combination of C-AFM, SECM, and CL.

In order to improve the performance of existing technologies based on single crystal diamond grown by chemical vapour deposition (CVD), and to open up new technologies in fields such as quantum computing or solid state and semiconductor disc lasers, control over surface and bulk crystalline quality is of great importance. Inductively coupled plasma (ICP) etching using an Ar/Cl gas mixture is demonstrated to remove sub-surface damage of mechanically processed surfaces, whilst maintaining macroscopic planarity and low roughness on a microscopic scale. Dislocations in high quality single crystal CVD diamond are shown to be reduced by using substrates with a combination of low surface damage and low densities of extended defects. Substrates engineered such that only a minority of defects intersect the epitaxial surface are also shown to lead to a reduction in dislocation density. Anisotropy in the birefringence of single crystal CVD diamond due to the preferential direction of dislocation propagation is reported. Ultra low birefringence plates (< 10 -5 ) are now available for intra-cavity heat spreaders in solid state disc lasers, and the application is no longer limited by depolarisation losses. Birefringence of less than 5×10 -7 along a direction perpendicular to the CVD growth direction has been demonstrated in exceptionally high quality samples. † Corresponding author 2 of 25 1.