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Thin polycrystalline diamond films chemically vapor deposited on thinned silicon substrates were used as membranes for pressure sensor fabrication by means of selective chemical etching of silicon. The sensing element is based on a simple low-finesse Fabry–Pérot (FP) interferometer. The FP cavity is defined by the end-face of a single mode fiber and the diamond diaphragm surface. Hence, pressure is evaluated by measuring the cavity length by an optoelectronic system coupled to the single mode fiber. Exploiting the excellent properties of Chemical Vapor Deposition (CVD) diamond, in terms of high hardness, low thermal expansion, and ultra-high thermal conductivity, the realized sensors have been characterized up to 16.5 MPa at room temperature. Preliminary characterizations demonstrate the feasibility of such diamond-on-Si membrane structure for pressure transduction. The proposed sensing system represents a valid alternative to conventional solutions, overcoming the drawback related to electromagnetic interference on the acquired weak signals generated by standard piezoelectric sensors.

Gated integrating measurement method represents a widely used approach when fast, repetitive analogue signals are concerned. In this work a compact synchronized gated-integrator prototype has been realized and preliminary characterized. Front-end electronics is based on the mature high-precision switched-integrator transimpedance-amplifier IVC102 whose output is connected to a precision LT1911 inverting amplifier, whereas analogue-to-digital conversion, as well as timing control circuitry, are performed by a high-efficiency LPC845 microcontroller. Synchronizing signal detection with the external trigger generated in coincidence with a source, the proposed circuitry amplifies and integrates the signal only when the pulse is generated, displaying excellent performances in terms of linearity, sensitivity and signal-to-noise ratio. Hence, the proposed solution represents an affordable alternative to continuous-time regime measurement-techniques, usually adopted in radiation dosimetry where accuracy and sensitivity are strict requirements for treatment quality assurance.

Photoelectronic properties of orthorhombic undoped κ-Ga2O3 epitaxial thin films, grown on sapphire substrates by metal-organic chemical vapour deposition, were evaluated under X-ray irradiation (CuKα line, 8.05 keV) for the first...

One of the goals of modern dynamic radiotherapy treatments is to deliver high-dose values in the shortest irradiation time possible. In such a context, fast X-ray detectors and reliable front-end readout electronics for beam diagnostics are crucial to meet the necessary quality assurance requirements of care plans. This work describes a diamond-based detection system able to acquire and process the dose delivered by every single pulse sourced by a linear accelerator (LINAC) generating 6-MV X-ray beams. The proposed system is able to measure the intensity of X-ray pulses in a limited integration period around each pulse, thus reducing the inaccuracy induced by unnecessarily long acquisition times. Detector sensitivity under 6-MV X-photons in the 0.1–10 Gy dose range was measured to be 302.2 nC/Gy at a bias voltage of 10 V. Pulse-by-pulse measurements returned a charge-per-pulse value of 84.68 pC, in excellent agreement with the value estimated (but not directly measured) with a commercial electrometer operating in a continuous integration mode. Significantly, by intrinsically holding the acquired signal, the proposed system enables signal processing even in the millisecond period between two consecutive pulses, thus allowing for effective real-time dose-per-pulse monitoring.