The objectives of the semiconductor industry include scaling down the silicon (Si)-based devices from bulk to nanoscale, reducing the effective cost, and improving the performance of the device. [1] Semiconductor devices such as metal-oxide semiconductor field-effect transistors (MOSFETs), field-effect transistors (FETs), complementary metal oxide semiconductor (CMOS) transistors, and other semiconductor devices with different architectures and scaling properties have been analyzed according to the guidelines of International Technology Roadmap for Semiconductors (ITRS), International Roadmap for Devices and Systems (IRDS), and Nano Electronics Roadmap for Europe: Identification and Dissemination (NEREID). Moore's law, followed for subsequent scaling down of MOSFETs, FETs, and CMOS devices using 3D semiconductors (Si, gallium nitride, and gallium arsenide), has become irrelevant in the nanoregime. [2,3] Challenges such as device degradation due to short channel effects, leakage current leading to mobility degradation, and heat dissipation issues or "heat death" of conventional 3D semiconductor-based nanodimensional CMOS devices and electronic circuits are faced due to dangling bonds, surface scattering states, undesirable coupling with phonons, creation of interface states, manifestation of the leakage current, static power problem, and large subthreshold swing (SS). [4][5][6] Search for alternate channel materials has been trending in the 2D semiconductor research in order to meet the above mentioned challenges.Richard Feynman, in 1959, introduced researchers to the concept of nanodimensions (<100 nm) and nanotechnology. The semiconductor industry has come a long way since then with newly engineered nanostructures such as carbon nanotubes (CNT), quantum dots, quantum wires, and nanofibers that have led to great advancements in nanotechnology with applications in biomedicine, pharmaceuticals, cosmetics, and environmental issues. [7] Nanomaterials are usually classified into four types based on quantum confinement and the device dimensions, at least one of which is in the nanorange (from 1 to 100 nm). Different types of nanomaterials are represented in Figure 1 and are described as follows. 1) 3D nanomaterials: The nanomaterials for which all three dimensions lie outside the nanometric scale (1-100 nm) are termed as 3D materials. The electrons are free to move in all three directions and thus there is no confinement or limitation for the flow of charge carriers. The bulk 3D nanomaterials consist of bundles of nanowires, nanotubes, bulk powders, or nanoparticles and multiple nanolayers or polycrystals. 2) 2D nanomaterials. The 2D nanomaterials have only one dimension in the nanometric scale whereas the other two dimensions lie outside the nanoscale (1-100 nm). These are similar to a planar structure. The electrons can easily move in two directions and are confined in one direction, for example, nano thin films, nanocoatings, nanolayers, nanosheets, etc. for 2D quantum well systems. 3) 1D nanomaterials: These nanoma...
In the last few years, a large number of two-dimensional materials (2D) have been demonstrated to exhibit unprecedented characteristics or unique functionality. 2D materials have unique optical, electronic and mechanical properties, due to which these materials may exhibit a tremendous potential in nano-electronics and optoelectronics. With every passing year, the use of 2D materials is increasingly being explored for potential in various fields. This work specifically focuses on monolayer of Transition Metal Oxides (TMOs) such as NiO, CoO and FeO which are the Mott insulators and relatively less expensive, thus useful in reducing the cost in addition to their various other salient features. The present study focuses on the electronic and magnetic properties of monolayer of NiO (100), FeO (100) and CoO (100) done using first principles approach. The planar structure of monolayer of TMOs is investigated and found to be unstable whereas the buckle structures are seen to be relatively stable with minimum ground state energy. Also, the FeO (100), CoO (100) and NiO (100) buckle monolayer structures exhibit different magnetic phases from antiferromagnetic (Bulk) to ferromagnetic phase.
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