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As the devices have faced limit of shrinking, a lot of candidates rise to lead the next generation of device technology. One of the well-known candidates is a phase change memory (PCM) which is based on a chalcogenide material, called Ge2Sb2Te5 (GST). Principle of PCM operation is decided by changing the phase of GST thermodynamically. Thus, structures of PCM cell such as keyhole and μ-trench are mainly used for Joule heating. However, in the process of making a trench, it has inevitably difference between top and bottom aperture of the trench, and affects electrical properties of PCM. In this study, we build a PCM cell structure using technology computer-aided design (TCAD) and analyze effect of tilted angle of trench on phase change memory operation.