Monolayer group-VI transition metal dichalcogenides have recently emerged as semiconducting alternatives to graphene in which the true two-dimensionality is expected to illuminate new semiconducting physics. Here we investigate excitons and trions (their singly charged counterparts), which have thus far been challenging to generate and control in the ultimate two-dimensional limit. Utilizing high-quality monolayer molybdenum diselenide, we report the unambiguous observation and electrostatic tunability of charging effects in positively charged (X þ ), neutral (X o ) and negatively charged (X À ) excitons in field-effect transistors via photoluminescence. The trion charging energy is large (30 meV), enhanced by strong confinement and heavy effective masses, whereas the linewidth is narrow (5 meV) at temperatures o55 K. This is greater spectral contrast than in any known quasitwo-dimensional system. We also find the charging energies for X þ and X À to be nearly identical implying the same effective mass for electrons and holes.
Van der Waals bound heterostructures constructed with two-dimensional materials, such as graphene, boron nitride and transition metal dichalcogenides, have sparked wide interest in device physics and technologies at the two-dimensional limit. One highly coveted heterostructure is that of differing monolayer transition metal dichalcogenides with type-II band alignment, with bound electrons and holes localized in individual monolayers, that is, interlayer excitons. Here, we report the observation of interlayer excitons in monolayer MoSe 2 -WSe 2 heterostructures by photoluminescence and photoluminescence excitation spectroscopy. We find that their energy and luminescence intensity are highly tunable by an applied vertical gate voltage. Moreover, we measure an interlayer exciton lifetime of B1.8 ns, an order of magnitude longer than intralayer excitons in monolayers. Our work demonstrates optical pumping of interlayer electric polarization, which may provoke further exploration of interlayer exciton condensation, as well as new applications in two-dimensional lasers, light-emitting diodes and photovoltaic devices.
As a consequence of degeneracies arising from crystal symmetries, it is possible for electron states at band-edges ('valleys') to have additional spin-like quantum numbers. An important question is whether coherent manipulation can be performed on such valley pseudospins, analogous to that implemented using true spin, in the quest for quantum technologies. Here, we show that valley coherence can be generated and detected. Because excitons in a single valley emit circularly polarized photons, linear polarization can only be generated through recombination of an exciton in a coherent superposition of the two valley states. Using monolayer semiconductor WSe2 devices, we first establish the circularly polarized optical selection rules for addressing individual valley excitons and trions. We then demonstrate coherence between valley excitons through the observation of linearly polarized luminescence, whose orientation coincides with that of the linearly polarized excitation, for any given polarization angle. In contrast, the corresponding photoluminescence from trions is not observed to be linearly polarized, consistent with the expectation that the emitted photon polarization is entangled with valley pseudospin. The ability to address coherence, in addition to valley polarization, is a step forward towards achieving quantum manipulation of the valley index necessary for coherent valleytronics.
Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers and high-speed transistors. Creating analogous heterojunctions between different 2D semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we demonstrate that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2. The junctions, grown by lateral heteroepitaxy using physical vapour transport, are visible in an optical microscope and show enhanced photoluminescence. Atomically resolved transmission electron microscopy reveals that their structure is an undistorted honeycomb lattice in which substitution of one transition metal by another occurs across the interface. The growth of such lateral junctions will allow new device functionalities, such as in-plane transistors and diodes, to be integrated within a single atomically thin layer.
A variety of monolayer crystals have been proposed to be two-dimensional topological insulators exhibiting the quantum spin Hall effect (QSHE), possibly even at high temperatures. Here we report the observation of the QSHE in monolayer tungsten ditelluride (WTe) at temperatures up to 100 kelvin. In the short-edge limit, the monolayer exhibits the hallmark transport conductance, ~/ per edge, where is the electron charge and is Planck's constant. Moreover, a magnetic field suppresses the conductance, and the observed Zeeman-type gap indicates the existence of a Kramers degenerate point and the importance of time-reversal symmetry for protection from elastic backscattering. Our results establish the QSHE at temperatures much higher than in semiconductor heterostructures and allow for exploring topological phases in atomically thin crystals.
Engineering the electromagnetic environment of a nanometre-scale light emitter by use of a photonic cavity can significantly enhance its spontaneous emission rate, through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing a low-threshold laser system with small footprint, low power consumption and ultrafast modulation. An ultralow-threshold nanoscale laser has been successfully developed by embedding quantum dots into a photonic crystal cavity (PCC). However, several challenges impede the practical application of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here we report a new lasing strategy: an atomically thin crystalline semiconductor--that is, a tungsten diselenide monolayer--is non-destructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PCC. A continuous-wave nanolaser operating in the visible regime is thereby achieved with an optical pumping threshold as low as 27 nanowatts at 130 kelvin, similar to the value achieved in quantum-dot PCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within one nanometre of the PCC surface. The surface-gain geometry gives unprecedented accessibility and hence the ability to tailor gain properties via external controls such as electrostatic gating and current injection, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.
A two-dimensional topological insulator (2DTI) is guaranteed to have a helical 1D edge mode 1-11 in which spin is locked to momentum, producing the quantum spin Hall effect and prohibiting elastic backscattering at zero magnetic field. No monolayer material has yet been shown to be a 2DTI, but recently the Weyl semimetal WTe 2 was predicted 12 to become a 2DTI in monolayer form if a bulk gap opens. Here, we report that at temperatures below about 100 K monolayer WTe 2 does become insulating in its interior, while the edges still conduct. The edge conduction is strongly suppressed by in-plane magnetic field and is independent of gate voltage, save for mesoscopic fluctuations that grow on cooling due to a zero-bias anomaly which reduces the linear-response conductance. Bilayer WTe 2 also becomes insulating at low temperatures but does not show edge conduction. Many of these observations are consistent with monolayer WTe 2 being a 2DTI. However, the low temperature edge conductance, for contacts spacings down to 150 nm, is below the quantized value, at odds with the prediction that elastic scattering is completely absent in the helical edge.Experimental work on 2DTIs to date has focused on quantum wells in Hg/CdTe 4-7 and InAs/GaSb 9-11 designed to achieve an inverted band gap. These heterostructures show edge conduction as anticipated 13,14 , but they also present some puzzles. One is that the conductance at low temperatures is not perfectly quantized, becoming small in long edges 13 and showing mesoscopic fluctuations as a function of gate voltage 5,7,10 . This is inconsistent with the predicted absence of elastic backscattering at zero magnetic field, although several possible explanations have been put forward for the discrepancy [15][16][17][18][19][20] . Another is that the edges show signs of conducting even at high magnetic field 21,22 , contrary to expectations that helical modes, protected by timereversal (TR) symmetry at zero field, should Anderson-localize once this symmetry is broken. An additional complication is that non-helical edge conduction may also be present, due for instance to band bending when a gate voltage is applied 23 .Identification of a natural monolayer 2DTI, which lacked some of these discrepancies and which could be probed, manipulated, and coupled with other materials more easily than quantum wells, would be helpful for elucidating and exploiting TI physics. Band structure calculations predict that certain monolayer materials are intrinsically topologically nontrivial 12 . An example is monolayer WTe2, which has the T′ structure illustrated in Fig. 1a. Three-dimensional WTe2, in which such monolayers are stacked in the orthorhombic Td structure, has recently attracted attention as a type-II Weyl semimetal 24,25 that exhibits extreme non-saturating magnetoresistance 26,27 related to the closely balanced electron and hole densities [28][29][30] . Calculations suggest that the monolayer will be likewise a semimetal 12,30 , its Fermi surface comprising two electron pockets (green) an...
. We find that in bilayer MoS 2 the circularly polarized photoluminescence can be continuously tuned from −15% to 15% as a function of gate voltage, whereas in structurally non-centrosymmetric monolayer MoS 2 the photoluminescence polarization is gate independent. The observations are well explained as resulting from the continuous variation of orbital magnetic moments between positive and negative values through symmetry control.The Dirac-valley degree of freedom has recently been considered for new modes of electronic and photonic device operation 4,5,[9][10][11][12][13][14][15][16][17] following the arrival of atomically thin two-dimensional (2D) electronic systems 6,7,18,19 (Fig. 1a). In this context, phenomena such as valley polarization and anomalous valley-and spin-Hall effects have been discussed for the +K and −K Dirac valleys at opposite corners of the Brillouin zone in hexagonal systems [9][10][11][12]15 . The realization of these effects hinges on achieving control of valley contrast, that is, of properties that differ between the two valleys, in particular the magnetic moment (m) and Berry curvature ( ). Time-reversal symmetry dictates that each pseudovector, m as well as , has the same magnitude but opposite sign in the two valleys, whereas inversion symmetry requires them to have the same sign. Therefore, a necessary condition for valley-contrasting m and is inversion symmetry breaking 4 . Monolayer MoS 2 lacks structural inversion symmetry (Fig. 1a), and thus m and are non-zero, having equal magnitude but opposite signs in the two ±K valleys owing to timereversal symmetry. One direct consequence of non-zero m is valley-contrasting optical dichroism 5,8,9 , whereby charge carriers in the two valleys can be selectively excited by circularly polarized optical fields [9][10][11] . This effect permits optical generation of valley polarization, as recently demonstrated using polarized
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