No abstract

The photoluminescence (PL) spectrum of transition metal dichalcogenides (TMDs) shows a multitude of emission peaks below the bright exciton line and not all of them have been explained yet. Here, we study the emission traces of phonon-assisted recombinations of momentum-dark excitons. To this end, we develop a microscopic theory describing simultaneous exciton, phonon and photon interaction and including consistent many-particle dephasing. We explain the drastically different PL below the bright exciton in tungsten-and molybdenum-based materials as result of different configurations of bright and dark states. In good agreement with experiments, we show that WSe2 exhibits clearly visible low-temperature PL signals stemming from the phonon-assisted recombination of momentum-dark excitons.

Monolayer transition metal dichalcogenides (TMDs) exhibit a remarkably strong Coulomb interaction that manifests in tightly bound excitons. Due to the complex electronic band structure exhibiting several spin-split valleys in the conduction and valence band, dark excitonic states can be formed. They are inaccessibly by light due to the required spin-flip and/or momentum transfer. The relative position of these dark states with respect to the optically accessible bright excitons has a crucial impact on the emission efficiency of these materials and thus on their technological potential. Based on the solution of the Wannier equation, we present the excitonic landscape of the most studied TMD materials including the spectral position of momentum-and spin-forbidden excitonic states. We show that the knowledge of the electronic dispersion does not allow to conclude about the nature of the material's band gap, since excitonic effects can give rise to significant changes. Furthermore, we reveal that an exponentially reduced photoluminescence yield does not necessarily reflect a transition from a direct to a non-direct gap material, but can be ascribed in most cases to a change of the relative spectral distance between bright and dark excitonic states.

Heterostructures of atomically thin van der Waals bonded monolayers have opened a unique platform to engineer Coulomb correlations, shaping excitonic 1-3 , Mott insulating 4 , or superconducting phases 5,6 . In transition metal dichalcogenide heterostructures 7 , electrons and holes residing in different monolayers can bind into spatially indirect excitons 1,3,8-11 with a strong potential for optoelectronics 11,12 , valleytronics 1,3,13 , Bose condensation 14 , superfluidity 14,15 , and moiré-induced nanodot lattices 16 . Yet these ideas require a microscopic understanding of the formation, dissociation, and thermalization dynamics of correlations including ultrafast phase transitions. Here we introduce a direct ultrafast access to Coulomb correlations between monolayers; phase-locked mid-infrared pulses allow us to measure the binding energy of interlayer excitons in WSe2/WS2 hetero-bilayers by revealing a novel 1s-2p resonance, explained by a fully quantum mechanical model. Furthermore, we trace, with subcycle time resolution, the transformation of an exciton gas photogenerated in the WSe2 layer directly into interlayer excitons. Depending on the stacking angle, intra-and interlayer species coexist on picosecond scales and the 1s-2p resonance becomes renormalized. Our work provides a direct measurement of the binding energy of interlayer excitons and opens the possibility to trace and control correlations in novel artificial materials.In monolayers of transition metal dichalcogenides (TMDs), the confinement of electronic motion into two dimensions and the suppression of dielectric screening facilitate unusually strong Coulomb interaction 17-20 . This gives rise to excitons with giant binding energies of several hundred meV 17 , small Bohr radii 18 and ultrashort radiative lifetimes 19 . When two monolayers are contacted with type-II band alignment, the conduction band minimum and the valence band maximum are located in two different layers 7 . Owing to their proximity, electron-hole (e-h) pairs in adjacent monolayers are still subject to strong mutual Coulomb attraction. Interband photoluminescence combined with theory has, indeed, provided evidence of interlayer excitons 8,21-23 . Because the composite electron and hole wavefunctions overlap only weakly in space, these excitons are long lived -a key asset for future applications 1,3,14-16,24 .Yet, the weak coupling to light renders these quasiparticles inaccessible to interband absorption spectroscopy. Hence the binding energies of interlayer excitons, which depend sensitively on the delocalization of the electronic wavefunctions over the heterostructure 23 , have not been measured.Signatures of the ultrafast interlayer charge transfer have been studied by interband spectroscopy 8,21 .These techniques, however, cannot measure Coulomb correlations or the formation of interlayer excitons, on the intrinsic ultrashort timescales.Meanwhile, phase-locked electromagnetic pulses in the terahertz (THz) and mid-infrared (MIR) range have directly accessed ultrafast low-...

Stacking monolayers of transition metal dichalcogenides into a heterostructure with a finite twist-angle gives rise to artificial moiré superlattices with a tunable periodicity. As a consequence, excitons experience a periodic potential, which can be exploited to tailor optoelectronic properties of these materials. Whereas recent experimental studies have confirmed twist-angle-dependent optical spectra, the microscopic origin of moiré exciton resonances has not been fully clarified yet. Here, we combine first-principles calculations with the excitonic density matrix formalism to study transitions between different moiré exciton phases and their impact on optical properties of the twisted MoSe 2 /WSe 2 heterostructure. At angles smaller than 2°, we find flat, moiré-trapped states for inter- and intralayer excitons. This moiré exciton phase changes into completely delocalized states at 3°. We predict a linear and quadratic twist-angle dependence of excitonic resonances for the moiré-trapped and delocalized exciton phases, respectively.

Exciton binding energies of hundreds of meV and strong light absorption in the optical frequency range make transition metal dichalcogenides (TMDs) promising for novel optoelectronic nanodevices. In particular, atomically thin TMDs can be stacked to heterostructures enabling the design of new materials with tailored properties. The strong Coulomb interaction gives rise to interlayer excitons, where electrons and holes are spatially separated in different layers. In this work, we reveal the microscopic processes behind the formation, thermalization and decay of these fundamentally interesting and technologically relevant interlayer excitonic states. In particular, we present for the exemplary MoSe2-WSe2 heterostructure the interlayer exciton binding energies and wave functions as well as their time-and energy-resolved dynamics. Finally, we predict the dominant contribution of interlayer excitons to the photoluminescence of these materials. arXiv:1804.08412v1 [cond-mat.mes-hall]

Monolayers of transition metal dichalcogenides (TMDs) are characterized by an extraordinarily strong Coulomb interaction giving rise to tightly bound excitons with binding energies of hundreds of meV. Excitons dominate the optical response as well as the ultrafast dynamics in TMDs. As a result, a microscopic understanding of exciton dynamics is the key for a technological application of these materials. In spite of this immense importance, elementary processes guiding the formation and relaxation of excitons after optical excitation of an electron-hole plasma has remained unexplored to a large extent. Here, we provide a fully quantum mechanical description of momentum- and energy-resolved exciton dynamics in monolayer molybdenum diselenide (MoSe2) including optical excitation, formation of excitons, radiative recombination as well as phonon-induced cascade-like relaxation down to the excitonic ground state. Based on the gained insights, we reveal experimentally measurable features in pump-probe spectra providing evidence for the exciton relaxation cascade.

Tightly bound excitons in monolayer semiconductors represent a versatile platform to study two-dimensional propagation of neutral quasiparticles. Their intrinsic properties, however, can be severely obscured by spatial energy fluctuations due to a high sensitivity to the immediate environment. Here, we take advantage of the encapsulation of individual layers in hexagonal boron nitride to strongly suppress environmental disorder. Diffusion of excitons is then directly monitored using time-and spatially-resolved emission microscopy at ambient conditions. We consistently find very efficient propagation with linear diffusion coefficients up to 10 cm 2 /s, corresponding to room temperature effective mobilities as high as 400 cm 2 /Vs as well as a correlation between rapid diffusion and short population lifetime. At elevated densities we detect distinct signatures of many-particle interactions and consequences of strongly suppressed Auger-like exciton-exciton annihilation. Combination of analytical and numerical theoretical approaches is employed to provide pathways towards comprehensive understanding of the observed linear and non-linear propagation phenomena. We emphasize the role of dark exciton states and present a mechanism for diffusion facilitated by free electron hole plasma from entropy-ionized excitons.