Wide band gap semiconductors doped by transition metals are attracting much attention in part because of possible 'spintronics' applications. Using pseudo-potential plane-wave calculations and density functional theory (DFT), we studied effects of doping Mn of various concentrations on the cubic silicon carbide structure (-SiC). Band structures and density of states (DOSs) were calculated for -SiC and Si 1-x Mn x C (with x= 0.0313, 0.0625, and 0.25). Analyses of the DOSs revealed that the diluted ferromagnetic semiconductor Si 1-x Mn x C, i.e. SiC with Mn substituted for Si, should be a half-metal. Our results show spin polarization at Fermi energy (E f ), and a stable ferromagnetic state for x= 0.0625.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.