In this study, boron carbide (B4C) nanoparticles (NPs) are synthesized by pulsed laser ablation of boron in ethanol at a laser fluence of 6.36 J cm−2 pulse−1. The effect of numbers of laser pulses on the structural, optical, and electrical properties of B4C NPs was studied. X-ray diffraction (XRD) results revealed that all B4C nanoparticles synthesized were polycrystalline in nature with a rhombohedral structure. When the laser pulses increased from 500 to 1500, the optical band gap of B4C decreased from 2.45 to 2.38 eV. Fluorescence measurements showed the emission of two emission peaks. The Raman spectra of B4C nanoparticles exhibit six vibration modes centered at 270, 480, 533, 722, 820, and 1080 cm−1. Field emission scanning electron microscope (FESEM) images show the formation of spherical nanoparticles of an average size of 68, 75, and 84 nm for samples prepared at 500, 1000, and 1500 pulses, respectively. The dark I–V characteristics of B4C/Si heterojunction photodetectors showed rectification characteristics, and the heterojunction prepared at 500 pulses exhibits the best junction characteristics. The illuminated I–V characteristics of B4C/p-Si heterojunction photodetectors exhibited high photosensitivity to white light. The spectral responsivity of the p-B4C/p-Si photodetector shows that the maximum responsivity was 0.66 A W−1 at 500 nm for a photodetector prepared at 500 pulses. The highest specific detectivity and quantum efficiency were 2.18 × 1012 Jones and 1.64 × 102% at 550 nm, respectively, for a heterojunction photodetector fabricated at 500 pulses, The ON/OFF ratio, rise time, and fall time are measured as a function of the number of laser pulses. The photodetector fabricated at 1500 laser pulses showed roughly rise and fall intervals of 1.5 and 0.8 s, respectively.
In this paper, the structure and optical properties of pure cadmium oxide films, and doped with gallium oxide have been achieved, the films were deposited on glass and silicon substrates, with different ratios (1,3,5,7)% via spry pyrolysis method, at the substrate temperature of ̊ C300. XRD results showed that all prepared films had a cubic polycrystalline structure, with preferred orientation of (111) for cadmium oxide. Surface morphology was studied using atomic force microscope (AFM), the grain size of the thin films was about 105.42-69.07 nm, with surface roughness is about (3.32-0.901) nm and root mean square (RMS) (3.97-1.05) nm for cadmium oxide films. The optical properties were studied using UV-VIS spectroscopy at wavelength (300-1100 nm), It was observed that the value of transmittance increases when the gallium doping are increasing and the films have a direct energy gap about (2.3-4) eV that increases with the increase in gallium concentration. Sensitivity properties of pure cadmium oxide films, and doped with gallium oxide was deposed on silicon substrates of NO2 gas at different operation temperatures was found that the films of CdO doped with Gallium oxide on silicon substrate has greater sensitivity than the films than the undoped and that the doping has improved the sensitivity of the membranes CdO.
In this paper we consider a matrix Hypergeometric differential equation, which are special matrix functions and solution of a specific second order linear differential equation. The aim of this work is to extend a well known theorem on Hypergeometric function in the complex plane to a matrix version, and we show that the asymptotic expansions of Hypergeometric function in the complex plane ” that are given in the literature are special members of our main result. Background and motivation are discussed.
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