Two-dimensional (2D) layered materials including transition metal dichalcogenides (TMDCs) have recently been at the heart of the quantum materials and information sciences research due to unusual properties associated with their firmly defined dimensionalities. Many efforts have focused on developing new methods for the accelerated growth and discovery of 2D materials, including physical and chemical vapor deposition techniques. However, the synthesis of these multi-component crystals in the gas phase has been extremely challenging due to complex and uncontrolled gas-phase reactions and flow dynamics. Here, we demonstrate a novel laser-assisted synthesis technique (LAST), which significantly reduces the existing growth complexities and notably accelerates the growth of 2D materials. This approach facilitates the growth of various 2D materials directly from stoichiometric powders by laser vaporization process. We show that directed laser heating allows pressure-independent decoupling of the growth and evaporation kinetics enabling the use of stoichiometric powder as precursors for the growth of high-quality 2D materials including MoS 2 , MoSe 2 , WSe 2 , and WS 2 . A comprehensive experimental study was conducted to identify the system behavior, including the evaporation and growth parameters as well as the processproperty relationships. This method presents a general yet simple approach for accelerating the discovery of emerging quantum materials.
Excitons in two-dimensional transition metal dichalcogenide monolayers (2D-TMDs) are of essential importance due to their key involvement in 2D-TMD-based applications. For instance, exciton dissociation and exciton radiative recombination are indisponsable...
Direct growth and patterning of atomically thin two-dimensional (2D) materials on various substrates are essential steps towards enabling their potential for use in the next generation of electronic and optoelectronic devices. The conventional gas-phase growth techniques, however, are not compatible with direct patterning processes. Similarly, the condensed-phase methods, based on metal oxide deposition and chalcogenization processes, require lengthy processing times and high temperatures. Here, a novel self-limiting laser crystallization process for direct crystallization and patterning of 2D materials is demonstrated. It takes advantage of significant differences between the optical properties of the amorphous and crystalline phases. Pulsed laser deposition is used to deposit a thin layer of stoichiometric amorphous molybdenum disulfide (MoS 2 ) film (∼3 nm) onto the fused silica substrates. A tunable nanosecond infrared (IR) laser (1064 nm) is then employed to couple a precise amount of power and number of pulses into the amorphous materials for controlled crystallization and direct writing processes. The IR laser interaction with the amorphous layer results in fast heating, crystallization, and/or evaporation of the materials within a narrow processing window. However, reduction of the midgap and defect states in the as crystallized layers decreases the laser coupling efficiency leading to higher tolerance to process parameters. The deliberate design of such laser 2D material interactions allows the selflimiting crystallization phenomena to occur with increased quality and a much broader processing window. This unique laser processing approach allows high-quality crystallization, direct writing, patterning, and the integration of various 2D materials into future functional devices.
The stability and reliability of emerging two-dimensional (2D) quantum materials subjected to harsh environments, such as high-energy radiation, are of high importance, particularly in the fields of space, defense, and energy applications. In this work, we explored the effects of gamma radiation on the structural and optical properties of monolayer WSe2 and WS2 crystals. Raman and photoluminescence spectroscopies were employed to study and probe radiation-induced changes to the samples after exposure to intense gamma radiation (from a 60Co source) in a high-vacuum environment (∼1 × 10−6 Torr) and with various exposure times to vary the total accumulated dosage (up to ∼56 Mrad). In general, very small changes in optical or vibrational properties were observed compared to pristine samples, suggesting noteworthy stability even for high dosages of gamma radiation. Moreover, we found that WSe2 monolayer samples exhibited higher tolerance to gamma radiation compared to WS2 samples. These findings highlight the inherent stability of these 2D quantum materials in harsh radioactive environments, which motivates further investigation of their optical, electrical, and structural properties and exploration for use in future space, energy, and defense applications.
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