Background- Covid-19 outbreak results in lockdown of provinces by isolating the infected ones and quarantine the population to prevent community spread of corona virus. During quarantine people has to restrict their movement and keep themselves under self-isolation at their home to prevent infections. In long quarantine period it may create psychological or anxiety/depression problem for some people. The objective of our study is to assess and understand the level of psychological, anxiety/depression in quarantine people during covid19 outbreak. Methods- Self-designed digital questionnaire has been used to assess the psychological and anxiety/depression level. The questionnaire contains questions about demographic, socio-assessment, anxiety/depression and psychological assessment. The questionnaire was circulated via digital medium. Result- Total 181 quarantined people were participated in our study, most of our population ages between of 21-30. General health of our participants is moderately good, Socio-status of our participants is fairly effected may be due to restrict movement and conservative way of living during quarantine period. 60.8% of participants become nervous some of the time, about 50% of participants shows the anxiety/depression symptoms, about 30% of our participants are somewhat affected by their sleeping patterns and about 35% participants are sometimes unsatisfied or slightly satisfied during quarantine period. Apart from this out of 181 participants 15 people are having travel history of International or national destinations. The overall mean is 2.2 and SD is 0.6. Conclusion-We found somewhat negative emotions (anxiety/depression, Socio status) in people during quarantine. Which may show low quality of life or low satisfactory life. Keywords: Covid-19, lockdown, quarantine, anxiety, depression

No abstract

No abstract

No abstract

This paper presents a study of the influence of variation of counter doping thickness on short channel effect in symmetric double-gate (DG) nano MOSFETs. Short channel effects are estimated from the computed values of current-voltage (I-V) characteristics. Two dimensional Quantum transport equations and Poisson equations are used to compute DG MOSFET characteristics. We found that the transconductance (g m ) and the drain conductance (g d ) increase with an increase in p-type counter-doping thickness (T c ). Very high value of transconductance (g m = 38 mS/µm) is observed at 2.2 nm channel thickness. We have established that the threshold voltage of DG MOSFETs can be tuned by selecting the thickness of counter-doping in such device.