The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

Single-crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism and so on that have the potential for completely new electronic applications. Direct synthesis of such oxides on silicon remains challenging because of the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces. Here we report integration of thin (down to one unit cell) single crystalline, complex oxide films onto silicon substrates, by epitaxial transfer at room temperature. In a field-effect transistor using a transferred lead zirconate titanate layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state. These results represent the realization of long pursued but yet to be demonstrated single-crystal functional oxides on-demand on silicon.

Single-crystal perovskite ferroelectric material is integrated at room temperature on a flexible substrate by the layer transfer technique. Two terminal memory devices fabricated with these materials exhibit faster switching speed, lower operating voltage, and superior endurance than other existing flexible counterparts. The research provides an avenue toward combining the rich functionality of charge and spin states, offered by the general class of complex oxides, onto a flexible platform.

As an important class of spintronic material, ferromagnetic oxide semiconductors are characterized with both charge and spin degrees of freedom, but they often show weak magnetism and small coercivity, which limit their applications. In this work, we synthesized Nd-doped ZnO nanowire arrays which exhibit stable room temperature ferromagnetism with a large saturation magnetic moment of 4.1 μ(B)/Nd as well as a high coercivity of 780 Oe, indicating giant magnetic anisotropy. First-principles calculations reveal that the remarkable magnetic properties in Nd-doped ZnO nanowires can be ascribed to the intricate interplay between the spin moments and the Nd-derived orbital moments. Our complementary experimental and theoretical results suggest that these magnetic oxide nanowires obtained by the bottom-up synthesis are promising as nanoscale building blocks in spintronic devices.

Spintronics, or spin-based data storage and manipulation technology, is emerging as a very active research area because of both new science and potential technological applications. As the characteristic lengths of spin-related phenomena naturally fall into the nanometre regime, researchers start applying the techniques of bottom-up nanomaterial synthesis and assembly to spintronics. It is envisaged that novel physics regarding spin manipulation and domain dynamics can be realized in quantum confined nanowire-based devices. Here we review the recent breakthroughs related to the applications of oxide nanowires in spintronics from the perspectives of both material candidates and device fabrication. Oxide nanowires generally show excellent crystalline quality and tunable physical properties, but more efforts are imperative as we strive to develop novel spintronic nanowires and devices.

Ferroelectric domain walls in single-crystal complex oxide thin films are found to be orders of magnitude slower when the interfacial bonds with the heteroepitaxial substrate are broken to create a freestanding film. This drastic change in domain wall kinetics does not originate from the alteration of epitaxial strain; rather, it is correlated with the structural ripples at mesoscopic length scale and associated flexoelectric effects induced in the freestanding films. In contrast, the effects of the bondbreaking on the local static ferroelectric properties of both top and bottom layers of the freestanding films, such as domain wall width and spontaneous polarization, are modest and governed by the change in epitaxy-induced compressive strain. Single-crystal complex oxide ferroelectric (FE) thin films exhibit high spontaneous polarization, coherent switching, and low coercive field-a unique set of properties ideal for the manufacture of energy-efficient, beyond-CMOS logic and memory components, [1] as well as future quantum computing devices. [2] One of the primary bottlenecks in this field stems from the great difficulty in producing high-quality interfaces between these single-crystal oxides and the singlecrystal silicon-the prevalent substrate in microelectronics, hindering their widespread use. Recent developments in complex oxide layer transfer techniques (LTTs), however, may make the monolithic integration of not only FE materials possible [3,4] but also other single-crystal functional oxides such as half-metals, high T c superconductors, and multiferroic materials-even down to monolayer Received: ((will be filled in by the editorial staff)) Revised: ((will be filled in by the editorial staff))

We report a thickness-dependent evolution of magnetic domains from long stripe-like to bubble-like entities in La1−xSrxMnO3 (x ∼ 0.3) (LSMO) films grown on LaAlO3 substrates. By using 2-D fast Fourier transformation of magnetic force microscopy images and power spectral density function, we accurately determine the domain width in LSMO films with a wide range of thickness (50–325 nm). We find that the domain size scales with the Kittel’s square root law [C. Kittel, Phys. Rev. 70, 965 (1946).] only when reduced film thicknesses are used, which suggests the critical role of substrate-film interaction in domain formation.

Intrinsic domain-wall resistivity in half-metallic manganite thin films