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[8][9][10][11] . Here, we demonstrate on- as schematized in Fig. 1. In particular, we used a spectrally-filtered mode-locked laser to excite a single resonance of the microring at ~1550 nm wavelength, in turn producing pairs of correlated signal and idler photons spectrally-symmetric to the excitation field and which cover multiple resonances, see Fig. 1. The individual photons were intrinsically generated in a superposition of multiple frequency modes and owing the energy conservation of SFWM, this approach leads to the realization of a two-photon high-dimensional frequency-entangled state.We performed two experiments to characterize the dimensionality of the generated state. The large free spectral range (FSR) of the ring cavity (~200 GHz), i.e. the spectral separation between adjacent resonance modes, enabled us to use a commercially available telecommunications programmable filter (see Methods) for individually selecting and manipulating the states in these modes (given the filter's operational bandwidth of 1527.4 to 1567.5 nm, we were able to access 10 signal and 10 idler resonances). We measured the joint spectral intensity, describing the twophoton state's frequency distribution, see Methods. Specifically, we routed different frequency 4 modes of the signal and idler photons to two single photon detectors and counted photon coincidences for all sets of mode combinations. As shown in Fig. 2a, photon coincidences were measured only for mode combinations spectrally-symmetric to the excitation, a characteristic of frequency-entangled states. In addition, we evaluate the Schmidt number of our source. This parameter describes the lowest number of significant orthogonal modes in a bipartite system, and therefore describes its effective dimension. Through a Schmidt mode decomposition of the correlation matrix (see Methods), we extracted the lower bound for the Schmidt number to be 9.4, see Fig. 2b.Due to the narrow spectral linewidth of the photons (~800 MHz) and the related long coherence time (~0.6 ns), the effective time resolution of our full detection system (~100 ps) was sufficient to perform time-domain measurements and extract the maximal dimensionality of the state, seeMethods. Specifically, we measured the second-order coherence of the signal and idler fields using These measurements confirmed that one photon pair simultaneously spans multiple frequency modes, forming a high-dimensional entangled state of the form, with ∑| | 2 = 1 (Eq. 1).Here | ⟩ s and | ⟩ i are pure, single-frequency quantum states of the signal (s) and idler (i) photons, and k=1,2,…,D is the mode number, as indicated in Fig. 3 In general, the exploitation of quDit states for quantum information processing motivates the need for high-dimensional operations that enable access to multiple modes with a minimum number of components. While the individual elements (phase shifters and beam splitters) employed in the framework of spatial-mode quantum information processing usually operate on only one or two modes at a time 1 , the frequency...

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Complex optical photon states with entanglement shared among several modes are critical to improving our fundamental understanding of quantum mechanics and have applications for quantum information processing, imaging, and microscopy. We demonstrate that optical integrated Kerr frequency combs can be used to generate several bi- and multiphoton entangled qubits, with direct applications for quantum communication and computation. Our method is compatible with contemporary fiber and quantum memory infrastructures and with chip-scale semiconductor technology, enabling compact, low-cost, and scalable implementations. The exploitation of integrated Kerr frequency combs, with their ability to generate multiple, customizable, and complex quantum states, can provide a scalable, practical, and compact platform for quantum technologies.

We demonstrate enhanced four-wave mixing (FWM) in doped silica waveguides integrated with graphene oxide (GO) layers. Owing to strong mode overlap between the integrated waveguides and GO films that have a high Kerr nonlinearity and low loss, the FWM efficiency of the hybrid integrated waveguides is significantly improved. We perform FWM measurements for different pump powers, wavelength detuning, GO coating lengths, and number of GO layers. Our experimental results show good agreement with theory, achieving up to ∼9.5-dB enhancement in the FWM conversion efficiency for a 1.5-cm-long waveguide integrated with 2 layers of GO. We show theoretically that for different waveguide geometries an enhancement in FWM efficiency of ∼20 dB can be obtained in the doped silica waveguides and more than 30 dB in silicon nanowires and slot waveguides. This demonstrates the effectiveness of introducing GO films into integrated photonic devices in order to enhance the performance of nonlinear optical processes.

Photonic integrated circuits (PICs) are a key component [1] for future telecommunication networks, where demands for greater bandwidth, network flexibility, low energy consumption and cost must all be met. The quest for alloptical components has naturally targeted materials with extremely large nonlinearity, including chalcogenide glasses (ChG) [2] and semiconductors, such as silicon [3] and AlGaAs [4]. Yet issues such as immature fabrication technologies for ChG, and high linear and nonlinear losses for semiconductors, motivate the search for other materials. Here we present the first demonstration of nonlinear optics in integrated silica based glass waveguides using continuous wave (CW) light. We demonstrate four wave mixing (FWM), with low (7mW) CW pump power at λ=1550nm, in high index doped silica glass ring resonators capable of performing in photonic telecommunications networks as linear filters [5]. The high reliability, design flexibility, and manufacturability of our device raises the possibility of a new platform for future low-cost nonlinear all-optical PICs.

Integrated waveguide polarizers and polarization‐selective micro‐ring resonators (MRRs) incorporated with graphene oxide (GO) films are experimentally demonstrated. CMOS‐compatible doped silica waveguides and MRRs with both uniformly coated and patterned GO films are fabricated based on a large‐area, transfer‐free, layer‐by‐layer GO coating method that yields precise control of the film thickness. Photolithography and lift‐off processes are used to achieve photolithographic patterning of GO films with precise control of the placement and coating length. Detailed measurements are performed to characterize the performance of the devices versus GO film thickness and coating length as a function of polarization, wavelength and power. A high polarization dependent loss of ≈53.8 dB is achieved for the waveguide coated with 2‐mm‐long patterned GO films. It is found that intrinsic film material loss anisotropy dominates the performance for less than 20 layers whereas polarization‐dependent mode overlap dominates for thicker layers. For the MRRs, the GO coating length is reduced to 50 µm, yielding a ≈8.3 dB polarization extinction ratio between transverse electric (TE) and transverse magnetic (TM) resonances. These results offer interesting physical insights and trends of the layered GO films and demonstrate the effectiveness of introducing GO films into photonic‐integrated devices to realize high‐performance polarization selective components.