organic light-emitting diode (QD-OLED) product based on an oxide thin-film transistor (TFT) using an amorphous oxide semiconductor, indium-gallium-zincoxide (a-IGZO), which it will soon release. The QD-OLED has a high color gamut (BT2020 > 90%) and has excellent advantages over liquid crystal displays (LCDs) or OLEDs (BT2020, ≈75%). In the case of blue light (415-455 nm), which is harmful to eyesight, it emits only half that of existing LCDs and ≈30% that of OLEDs, emitting the lowest level among current displays. Furthermore, QD-OLEDs exhibit the best performance in all picture quality fields, such as viewing angle, reflectivity, and contrast. [6] It is important to secure the electrical stability of oxide TFTs in order to achieve high resolution, high brightness, and long life. The TFTs of the QD-OLED with the active-matrix operation basically consist of driving TFTs and switching TFTs. In the case of driving TFTs, which always supply a constant current, electrical stability is required under constant current stress (CCS) and positive bias thermal stress (PBTS). In the case of switching TFTs with a long turn-off state, it is essential to secure the stability under negative bias thermal illumination stress (NBTIS). To date, studies on the mechanism related to electrical stability have been continuously conducted on oxide TFTs using various oxide semiconductors, such as ZnO, ZnSnO, InGaZnO, InZnSnO, ZrInZnO, etc. [2,[7][8][9][10][11][12][13][14] The oxygen vacancies or oxygen interstitial model, [15][16][17][18][19][20][21] peroxide model, [22][23][24][25][26] and hydrogen complex model [27][28][29][30][31][32][33][34][35] for the oxide semiconductor itself are proposed mechanisms for electrical instability. Furthermore, the interface and near-interface defects between the oxide semiconductor and the insulating film of the upper and lower parts of the oxide TFT are also known to cause instability. First, in the case of the oxygen vacancy model, three things are known of the energy level in the electronic structure or chemical energy (spatial coordination with cation). There is an oxygen vacancy with two trapped electrons V o 0 near the valence band, a single charged oxygen vacancy with one trapped electron V o + , and a doubly charged oxygen vacancy with no trapped electron V o 2+ near the conduction band. These oxygen defects are known to cause An amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT), which exhibits the best electrical stability (PBTS ≤ 0.009 V), is implemented to create quantum-dot organic light-emitting diode product. Electrical stability has been explained through various mechanisms involving defects related to oxygen and hydrogen. The defects of a-IGZO are identified and the parameters of the deposition process are utilized to obtain V o + and V Zn − values of 1.7 × 10 17 and 2.4 × 10 18 spins cm −3 , respectively, which are quantified using electron spin resonance for the first time. The defects of the gate insulator (GI) in the upper and lower parts of the a-IGZO TFT and ...
This study investigates the effects of hydrogen post-treatment on 3D NAND flash memory. Hydrogen post-treatment annealing (PTA) is suggested to passivate the defects in the tunneling oxide/poly-Si interface and inside the poly-Si channel. However, excess hydrogen PTA can release hydrogen atoms from the passivated defects, which may degrade device performance. Therefore, it is important to determine the appropriate PTA condition for optimization of the device performance. Three different conditions for hydrogen PTA, namely Reference, H, and H++, are applied to observe the effects on device performance. The activation energy (Ea) of the device parameters was extracted according to the hydrogen PTA condition to analyze theeffects. The extracted Ea is about 74 meV for Reference, 53 meV for H, and 58 meV for H++conditions, with the best performance observed at the H condition. Optimal hydrogen PTAshows the best on-current (51% higher than Reference) and short-term retention (66% suppressed ΔVT than Reference) in 9X stacked 3D NAND flash memory.
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