In the left column of p. 187 and lines 35 and 36, the sentence "The acetonitrile was regulated at 24 Pa and the boron trichloride was regulated at 90 Pa," should read "The acetonitrile was regulated at 190 Pa and the boron trichloride was regulated at 1200 Pa." 2846 0031-9007͞96͞77(13)͞2846(1)$10.00

Dynamic negative resistances observed in p-n InSb diodes reverse biased at 77 °K are described. The diodes were made by zinc diffusion on the antimony side of n-type InSb wafers at 450 °C for 6 h. Coherent current pulse trains of a small duty cycle, with current pulses of amplitude 0.17 A and rise time 0.5 nsec and with great voltage drops, are generated in such a negative-resistance region which is associated with deep-level states produced by the above zinc diffusion treatment.

The I-V and G-V characteristics of an Al-Al2O3-Amorphous GeTe film are studied through tunneling spectroscopy. The conductance is expressed as G=G0+An(V-Vbi)n at room temperature, where G0 is a constant, n∼1.7, 2.4 and 3.1 and Vbi=Vbf (0.24 V) and =Vbr (0.14 V) forward and reverse biases, respectively. The energy gap (mobility gap) of amorphous GeTe is obtained by analyzing the tunnel data on the assumption that the band bending effects are small. The obtained energy gap (0.76 eV) is nearly consistent with the value obtained by electrical resistivity (0.70 eV) or that by optical absorption measurement (0.71 eV). It is also ascertained experimentally that the increase in the conductance well width at liquid nitrogen temperature is due to the high series resistance of the amorphous GeTe film.

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